Charge and potential of an inversion layer in a metal-insulator-semiconductor structure in a quantizing magnetic field

Soviet Physics Uspekhi ◽

10.1070/pu1985v028n07abeh003877 ◽

1985 ◽

Vol 28 (7) ◽

pp. 635-636

Author(s):

Vladimir M Pudalov ◽

S G Semenchinskiĭ ◽

Valeryan S Edel'man

Keyword(s):

Magnetic Field ◽

Inversion Layer ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Quantizing Magnetic Field

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Charge and potential of an inversion layer in a metalinsulator-semiconductor structure in a quantizing magnetic field

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.0146.198507h.0536 ◽

1985 ◽

Vol 146 (7) ◽

pp. 536

Author(s):

V.M. Pudalov ◽

S.G. Semenchinskii ◽

Valeryan S. Edel'man

Keyword(s):

Magnetic Field ◽

Inversion Layer ◽

Semiconductor Structure ◽

Quantizing Magnetic Field

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Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

Thin Solid Films ◽

10.1016/0040-6090(89)90001-1 ◽

1989 ◽

Vol 168 (2) ◽

pp. 157-163 ◽

Author(s):

B. Ullrich ◽

F. Kuchar ◽

R. Meisels ◽

F. Olcaytug ◽

A. Jachimowicz

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

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Investigations of metal-insulator-semiconductor structure in-homogeneities using a small-size mercury probe

Microelectronics Reliability ◽

10.1016/0026-2714(85)90335-x ◽

1985 ◽

Vol 25 (3) ◽

pp. 593

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.343099 ◽

1989 ◽

Vol 65 (2) ◽

pp. 651-661 ◽

Author(s):

S. Mitsutsuka ◽

T. Okamoto ◽

T. Niitsuma ◽

S. Minagawa

Keyword(s):

Acoustic Waves ◽

Surface Acoustic Waves ◽

Semiconductor Structure ◽

Propagation Loss ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques

Solid State Communications ◽

10.1016/0038-1098(87)90748-4 ◽

1987 ◽

Vol 64 (4) ◽

pp. 411-416 ◽

Author(s):

P. Bogdanski ◽

F. Murray ◽

J.P. Piel

Keyword(s):

Semiconductor Structure ◽

Structure Parameters ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

Journal of Applied Physics ◽

10.1063/1.369381 ◽

1999 ◽

Vol 85 (10) ◽

pp. 7471-7476 ◽

Author(s):

Kinya Ashikaga ◽

Toshio Ito

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Structure ◽

Memory Retention ◽

Simple Metal ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Retention Characteristics

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Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.05.119 ◽

2017 ◽

Vol 718 ◽

pp. 104-111 ◽

Author(s):

M. Chandra Sekhar ◽

Nallabala Nanda Kumar Reddy ◽

Harish Sharma Akkera ◽

B. Purusottam Reddy ◽

V. Rajendar ◽

...

Keyword(s):

Electronic Properties ◽

Oxide Layer ◽

Layer Thickness ◽

Annealing Temperature ◽

Semiconductor Structure ◽

Oxide Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Structural And Electronic Properties

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Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure

IEEE Electron Device Letters ◽

10.1109/led.2011.2169231 ◽

2011 ◽

Vol 32 (12) ◽

pp. 1746-1748 ◽

Author(s):

T. Ghosh ◽

D. Basak

Keyword(s):

Memory Effect ◽

Nonvolatile Memory ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Effect of F doping on capacitance–voltage characteristics of SiCOH low- k films metal–insulator–semiconductor structure

Chinese Physics B ◽

10.1088/1674-1056/19/5/057701 ◽

2010 ◽

Vol 19 (5) ◽

pp. 057701 ◽

Author(s):

Ye Chao ◽

Ning Zhao-Yuan

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

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