scholarly journals Theory of Frictional Drag in Coupled Quantum Wells: Beyond Weak Coupling

2000 ◽  
Vol 53 (1) ◽  
pp. 107
Author(s):  
Ben Yu-Kuang Hu

I give a brief review of the weak coupling theory of frictional drag of the coupled quantum well. I then present a theory of frictional drag based on the Kubo formalism that goes beyond weak coupling. Using the T-matrix approximation, I consider the Maki–Thompson contribution to the transconductivity and obtain a formal result for strong-coupling frictional drag in clean Fermi liquid systems. I discuss how the strong interlayer coupling could affect the temperature dependence of the drag transresistivity.




1999 ◽  
Vol 13 (05n06) ◽  
pp. 469-478
Author(s):  
BEN YU-KUANG HU

Independently contacted coupled quantum wells separated by barriers which allow significant interlayer interactions but no tunneling have been fabricated. When current is passed through one layer, the interlayer interactions drag carriers in the second layer, resulting in a voltage response (for open circuits). The magnitude of the response gives a quantitative measure of the effective interlayer interactions and response functions of the system, and hence this is an excellent laboratory for the study of many-body phenomena in two-dimensional electron gases. We review the Boltzmann and Kubo formalisms for the theory of drag effects in coupled quantum wells and discuss three specific cases where many-body effects significantly affect the drag: (1) acoustic phonon-mediated drag, (2) large enhancements due to coupled plasmon modes, and (3) interplay of screening and Landau levels in large magnetic fields.



1992 ◽  
Author(s):  
Mark I. Stockman ◽  
Leonid S. Muratov ◽  
Thomas F. George


Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.



2015 ◽  
Vol 87 ◽  
pp. 131-136 ◽  
Author(s):  
A. Tiutiunnyk ◽  
V. Tulupenko ◽  
V. Akimov ◽  
R. Demediuk ◽  
A.L. Morales ◽  
...  


1994 ◽  
Vol 37 (4-6) ◽  
pp. 721-724 ◽  
Author(s):  
T.S. Turner ◽  
P.M. Martin ◽  
L. Eaves ◽  
H.B. Evans ◽  
P.A. Harrison ◽  
...  


1995 ◽  
Vol 17 (11-12) ◽  
pp. 1459-1463
Author(s):  
T. Fukuzawa ◽  
E. Yamada


2008 ◽  
Vol 104 (6) ◽  
pp. 064321
Author(s):  
Genhua Liu ◽  
Yonghai Chen ◽  
Yu Liu ◽  
Caihong Jia ◽  
Zhanguo Wang


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