Temperature dependence of s*ca phase electric field behavior as evidenced by polarization current and dielectric measurements

2000 ◽  
Vol 245 (1) ◽  
pp. 101-110 ◽  
Author(s):  
R. Douali ◽  
C. Legrand ◽  
H. T. Nguyen
Keyword(s):  
Electric Field ◽  
Temperature Dependence ◽  
Polarization Current ◽  
Dielectric Measurements ◽  
Field Behavior

Interaction of Point Defects in Ice

1978 ◽  
Vol 21 (85) ◽  
pp. 115-122
Author(s):  
J. H. Bilgram ◽  
H. Gränicher
Keyword(s):  
Experimental Data ◽  
Dielectric Properties ◽  
Temperature Dependence ◽  
Point Defects ◽  
Low Frequency ◽  
Defect Concentration ◽  
Dielectric Measurements ◽  
Long Time ◽  
Nmr Techniques ◽  
Bjerrum Defect

AbstractThe interaction of point detects in ice has been neglected for a long time. Experimental data obtained from dielectric measurements on HF-doped crystals stimulated a new evaluation of the possibility of an interaction between Bjerrum defects and ions. In a previous paper it has been shown that this leads us to assume the existence of aggregates of Bjerrum defects and ions. In this paper these aggregates and Bjerrum defects are used to explain the dielectric properties of ice, especially the temperature dependence of the product of the high and low frequency conductivity σ0σ∞.The interaction of Bjerrum defects and impurity molecules leads to a dependence of the concentration of frenkel pairs on Bjerrum-defect concentration. At HF concentrations above the native Bjerrum-defect concentration the formation of a Frenkel pair is enhanced. This leads to the fast out-diffusion which has been studied in highly doped crystals by means of NMR techniques.

TEMPERATURE-DEPENDENCE OF PROTON CONDUCTIVITY IN HYDROGEN-BONDED MOLECULAR SYSTEMS

2007 ◽  
Vol 21 (19) ◽  
pp. 1239-1252 ◽  
Author(s):  
XIAO-FENG PANG ◽  
BO DENG ◽  
HUAI-WU ZHANG ◽  
YUAN-PING FENG
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Temperature Dependence ◽  
Electric Conductivity ◽  
Proton Conductivity ◽  
Model System ◽  
Time Dependent ◽  
Molecular Systems ◽  
Damping Effect ◽  
Hydrogen Bonded

The temperature-dependence of proton electric conductivity in hydrogen-bonded molecular systems with damping effect was studied. The time-dependent velocity of proton and its mobility are determined from the Hamiltonian of a model system. The calculated mobility of (3.57–3.76) × 10-6 m 2/ Vs for uniform ice is in agreement with the experimental value of (1 - 10) × 10-2 m 2/ Vs . When the temperature and damping effects of the medium are considered, the mobility is found to depend on the temperature for various electric field values in the system, i.e. the mobility increases initially and reaches a maximum at about 191 K, but decreases subsequently to a minimum at approximately 241 K, and increases again in the range of 150–270 K. This behavior agrees with experimental data of ice.

Temperature dependence of the electric field gradient at111Cd in Ga- and Bi-metal

1981 ◽  
Vol 9 (1-4) ◽  
pp. 293-296 ◽  
Author(s):  
W. Keppner ◽  
W. K�rner ◽  
P. Heubes ◽  
G. Schatz
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Temperature Dependence ◽  
Field Gradient

Temperature dependence of the electric field gradient in Er metal

1983 ◽  
Vol 15 (1-4) ◽  
pp. 283-287 ◽  
Author(s):  
M. H. Rafailovich ◽  
O. C. Kistner ◽  
E. Dafni ◽  
A. W. Sunyar ◽  
M. Mohsen ◽  
...  
Keyword(s):  
Electric Field ◽  
Electric Field Gradient ◽  
Temperature Dependence ◽  
Field Gradient

Partial Dissolution of Charge Order Phase Observed in -(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor

2016 ◽  
Vol 16 (4) ◽  
pp. 3267-3272
Author(s):  
Masatoshi Sakai ◽  
Norifumi Moritoshi ◽  
Shigekazu Kuniyoshi ◽  
Hiroshi Yamauchi ◽  
Kazuhiro Kudo ◽  
...  
Keyword(s):  
Electric Field ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Conductance ◽  
Charge Order ◽  
Crystal Field Effect ◽  
Effect Transistor

The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.

Sign in / Sign up

Export Citation Format

Share Document