Chemical-bond model for gold surface states in gold-doped silicon/silicon dioxide structures

1982 ◽  
Vol 53 (3) ◽  
pp. 271-279
Author(s):  
G. R. MOGHAL
Keyword(s):  
Silicon Dioxide ◽  
Chemical Bond ◽  
Surface States ◽  
Gold Surface ◽  
Bond Model ◽  
Doped Silicon ◽  
Silicon Silicon

Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition

1966 ◽  
Vol 5 (4) ◽  
pp. 275-288 ◽  
Author(s):  
Yasuo Tarui ◽  
Yoshio Komiya ◽  
Hiroo Teshima ◽  
Kiyoko Nagai
Keyword(s):  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Surface States ◽  
Silicon Silicon ◽  
Silicon Silicon Dioxide Interface

Carrier tunneling in nanocrystalline silicon–silicon dioxide superlattices: A weak coupling model

2004 ◽  
Vol 69 (23) ◽  
Author(s):  
B. V. Kamenev ◽  
G. F. Grom ◽  
D. J. Lockwood ◽  
J. P. McCafrey ◽  
B. Laikhtman ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Weak Coupling ◽  
Coupling Model ◽  
Nanocrystalline Silicon ◽  
Carrier Tunneling ◽  
Silicon Silicon

EFM Study on Ge Island: Carrier Charge and Storage Effect

2010 ◽  
Vol 1260 ◽  
Author(s):  
Zhen Lin ◽  
Pavel Brunkov ◽  
Xueying Ma ◽  
Franck Bassani ◽  
Georges Bremond
Keyword(s):  
Silicon Dioxide ◽  
Electrostatic Force ◽  
Storage Effect ◽  
Silicon Dioxide Layer ◽  
Conductive Material ◽  
Doped Silicon ◽  
Charge Decay ◽  
Memory Applications ◽  
Carrier Charge ◽  
And Storage

AbstractIn this paper, individual Ge nano island on top of a silicon dioxide layer of thermally grown on a n+ type doped silicon (001) substrate have been studied. The charging ability of an individual Ge island was evaluated by EFM two-pass lift mode measurement. Such Ge nano island becomes an iso-potential and behaves as a conductive material after being charged. These charges were directly injected and were trapped homogenous in the isolated Ge island. It is also shown that the dominant charge decay mechanism during discharging of nc-Ge is related to the leakage of these trapped charges. Further more, the retention time of these trapped charges was evaluated and the electrostatic force was also studied by using different tip bias during scan. Such a study should be very useful to the Ge-nc in memory applications.

Using neutral metastable argon atoms and contamination lithography to form nanostructures in silicon, silicon dioxide, and gold

1997 ◽  
Author(s):  
Kent S. Johnson ◽  
Karl K. Berggren ◽  
Andrew J. Black ◽  
Charles T. Black ◽  
Arthur P. Chu ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Silicon
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