Relationship between the electronic structure and the precipitation of FeTiP in interstitial-free ferritic steels

2000 ◽  
Vol 80 (10) ◽  
pp. 2393-2403 ◽  
Author(s):  
Raju P. Gupta ◽  
G. Martin ◽  
S. Lanteri ◽  
P. Maugis ◽  
M. Guttmann
Keyword(s):  
Electronic Structure ◽  
Ferritic Steels ◽  
Interstitial Free

Through Thickness Microstructural Investigation of Temper Rolled Ferritic Steels for Thin Sheet Applications

2010 ◽  
Vol 89-91 ◽  
pp. 73-78
Author(s):  
Caroline Luis ◽  
Monique Gaspérini ◽  
Thierry Chauveau
Keyword(s):  
Thin Sheet ◽  
Sheet Thickness ◽  
Ferritic Steels ◽  
Temper Rolling ◽  
Interstitial Free ◽  
Low Carbon ◽  
X Ray Diffraction ◽  
Shear Tests ◽  
Microstructural Investigation ◽  
X Ray

This paper focuses on the analysis of the microstructure and of the texture through the sheet thickness after temper rolling of very thin ferritic steels. The study uses EBSD and X-Ray diffraction. Comparison is made between an interstitial-free (IF) steel and of some industrial low carbon ferritic steels used after ageing. The experimental results are discussed with respect to the anisotropy of the mechanical behaviour after temper rolling during simple shear tests.

scholarly journals Effect of Substitutional Element Addition on Hall-Petch Relationship in Interstitial Free Ferritic Steels

2019 ◽  
Vol 59 (10) ◽  
pp. 1929-1931 ◽  
Author(s):  
Fulin Jiang ◽  
Takuro Masumura ◽  
Toshihiro Tsuchiyama ◽  
Setsuo Takaki
Keyword(s):  
Ferritic Steels ◽  
Interstitial Free ◽  
Petch Relationship ◽  
Substitutional Element ◽  
Element Addition

scholarly journals Effect of microstructural defects on passive layer properties of interstitial free (IF) ferritic steels in alkaline environment

2021 ◽  
Vol 182 ◽  
pp. 109271
Author(s):  
A. Yilmaz ◽  
K. Traka ◽  
S. Pletincx ◽  
T. Hauffman ◽  
J. Sietsma ◽  
...  
Keyword(s):  
Passive Layer ◽  
Ferritic Steels ◽  
Interstitial Free ◽  
Alkaline Environment ◽  
Microstructural Defects

Influence of Alloying Elements on the Hall-Petch Coefficient in Ferritic Steel

2012 ◽  
Vol 706-709 ◽  
pp. 181-185 ◽  
Author(s):  
Setsuo Takaki
Keyword(s):  
Yield Strength ◽  
Ferritic Steel ◽  
Chromium Content ◽  
Friction Stress ◽  
Ferritic Steels ◽  
Interstitial Free ◽  
Low Carbon ◽  
Petch Relation ◽  
Carbon And Nitrogen ◽  
Solute Carbon

Yield strength of ferritic steel increases with grain refinement standing on the Hall-Petch relation. In low carbon ferritic steels, the following relation is established between yield strength σy and grain size d: σy [MPa]= 100+600/√d [μm]. The Hall-Petch coefficient of interstitial free steels is substantially small as 0.15MPa·√m but it can be greatly increased by the existence of small amount of solute carbon less than 60ppm. As for the effect of substitutional elements such as Cr and P, some papers reports fairly large influence to the Hall-Petch coefficient of ferritic iron. However, the effect of small amount of carbon is sometime neglected or not cleared on the evaluation of Hall-Petch coefficient in ferritic steels. In order to evaluate the effect of substitutional elements, the research should be performed using interstitial free steels to eliminate the influence of solute carbon and nitrogen. In this paper, Hall-Petch relation was examined in iron, Fe-Cr alloys and Fe-P alloys with 0.02-0.05mass% Ti and the following results were obtained: 1) The Hall-Petch coefficient of interstitial free iron is about 0.15MPa·√m. 2) Chromium does not give any influence to the Hall-Petch coefficient of ferritic iron, although the friction stress σ0 is enhanced in proportional to chromium content (Δσ0 [MPa]=7×(mass%Cr)). 3) Phosphorus does not affect the Hall-Petch coefficient of ferritic iron or reduce it somewhat but increases markedly the friction stress σ0 (Δσ0 [MPa]=250×(mass%P)1/2). 4) Even under the co-existence of carbon with chromium and phosphorus, carbon dominantly works to increase the Hall-Petch coefficient of ferritic steels, but it is changeable due to the interaction between carbon and the other substitutional elements.

Microanalysis of precipitates in a ferritic steel

1978 ◽  
Vol 36 (1) ◽  
pp. 618-619
Author(s):  
J.M. Titchmarsh
Keyword(s):  
Ferritic Steel ◽  
Particle Identification ◽  
Energy Dispersive ◽  
Objective Lens ◽  
Ferritic Steels ◽  
Replica Technique ◽  
X Ray ◽  
Large Numbers ◽  
Scanning Transmission ◽  
Made In

The advances in recent years in the microanalytical capabilities of conventional TEM's fitted with probe forming lenses allow much more detailed investigations to be made of the microstructures of complex alloys, such as ferritic steels, than have been possible previously. In particular, the identification of individual precipitate particles with dimensions of a few tens of nanometers in alloys containing high densities of several chemically and crystallographically different precipitate types is feasible. The aim of the investigation described in this paper was to establish a method which allowed individual particle identification to be made in a few seconds so that large numbers of particles could be examined in a few hours.A Philips EM400 microscope, fitted with the scanning transmission (STEM) objective lens pole-pieces and an EDAX energy dispersive X-ray analyser, was used at 120 kV with a thermal W hairpin filament. The precipitates examined were extracted using a standard C replica technique from specimens of a 2¼Cr-lMo ferritic steel in a quenched and tempered condition.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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