scholarly journals High-resolution transmission electron microscopy imaging of misfit-dislocation networks at Cu-MgO and Cu-MnO interfaces

1999 ◽  
Vol 79 (9) ◽  
pp. 2083-2101 ◽  
Author(s):  
H. B. Groen ◽  
B. J. Kooi ◽  
W. P. Vellinga ◽  
J. Th. M. De Hosson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Misfit Dislocation ◽  
Microscopy Imaging ◽  
Transmission Electron

scholarly journals Experimental observation of carousel-like phason flips in the decagonal quasicrystal Al60Cr20Fe10Si10

2021 ◽  
Vol 77 (5) ◽  
Author(s):  
Zhanbing He ◽  
Jean-Luc Maurice ◽  
Haikun Ma ◽  
Yanguo Wang ◽  
Hua Li ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
High Resolution ◽  
Translational Symmetry ◽  
Long Range Order ◽  
Decagonal Quasicrystal ◽  
Microscopy Imaging ◽  
Transmission Electron

Quasicrystals have special crystal structures with long-range order, but without translational symmetry. Unexpectedly, carousel-like successive flippings of groups of atoms inside the ∼2 nm decagonal structural subunits of the decagonal quasicrystal Al60Cr20Fe10Si10 were directly observed using in situ high-temperature high-resolution transmission electron microscopy imaging. The observed directionally successive phason flips occur mainly clockwise and occasionally anticlockwise. The origin of these directional phason flips is analyzed and discussed.

A review of sample thickness effects on high-resolution transmission electron microscopy imaging

Micron ◽  
2020 ◽  
Vol 130 ◽  
pp. 102813
Author(s):  
Shouqing Li ◽  
Yunjie Chang ◽  
Yumei Wang ◽  
Qiang Xu ◽  
Binghui Ge
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Sample Thickness ◽  
Microscopy Imaging ◽  
Transmission Electron

Simulation Study of Aberration-Corrected High-Resolution Transmission Electron Microscopy Imaging of Few-Layer-Graphene Stacking

2010 ◽  
Vol 16 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Florence Nelson ◽  
Alain C. Diebold ◽  
Robert Hull
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Random Noise ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Microscopy Imaging ◽  
Layer Graphene ◽  
Transmission Electron ◽  
Aberration Corrected

AbstractGraphene is a single layer of carbon atoms arranged in a hexagonal lattice. The high carrier mobility and mechanical robustness of single layer graphene make it an attractive material for “beyond CMOS” devices. The current work investigates through high-resolution transmission electron microscopy (HRTEM) image simulation the sensitivity of aberration-corrected HRTEM to the different graphene stacking configurations AAA/ABA/ABC as well as bilayers with rotational misorientations between the individual layers. High-angle annular dark field–scanning transmission electron microscopy simulation is also explored. Images calculated using the multislice approximation show discernable differences between the stacking sequences when simulated with realistic operating parameters in the presence of low random noise.

Hrtem Study Of Dislocations In Gesi/Si Heterostructures Grown By VPE

1996 ◽  
Vol 442 ◽  
Author(s):  
Jijnwu Liang ◽  
Xueyuan Wan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Chemical Vapor ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Type Dislocation ◽  
First Time

AbstractGeSi/Si heterostructures grown by atmospheric chemical vapor epitaxy have been studied by cross sectional high resolution transmission electron microscopy (HRTEM). For the first time we have observed an interstitial-type dislocation loop which is located near to a 60° misfit dislocation in the initially prepared GeSi/Si sample. After 30 minutes observation, the interstitial-type dislocation loop disappeared and the 60° dislocation climbed. Moreover, we have observed dissociated 60° dislocations with about 9 nm width of stacking fault existing in silicon substrate.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

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