An X-band InGaP/GaAs Hetero-junction Bipolar Transistor Based Microwave Integrated Circuit Differential Voltage Controlled Oscillator for Satellite Communications

2010 ◽  
Vol 56 (6) ◽  
pp. 340-345 ◽  
Author(s):  
Hee-Young Yoo ◽  
Ram Krishna Maharjan ◽  
Nam-Young Kim
Keyword(s):  
Integrated Circuit ◽  
Satellite Communications ◽  
Bipolar Transistor ◽  
Voltage Controlled Oscillator ◽  
Microwave Integrated Circuit ◽  
Differential Voltage ◽  
X Band

Packaging an X-band microwave integrated circuit

1968 ◽  
Vol 15 (6) ◽  
pp. 429-430
Author(s):  
D.S. Granberry ◽  
C.E. Sterling
Keyword(s):  
Integrated Circuit ◽  
Microwave Integrated Circuit ◽  
X Band

scholarly journals A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology

2021 ◽  
Vol 11 (2) ◽  
pp. 1036
Author(s):  
Abdelhafid Es-saqy ◽  
Maryam Abata ◽  
Mahmoud Mehdi ◽  
Mohammed Fattah ◽  
Said Mazer ◽  
...  
Keyword(s):  
Power Consumption ◽  
Surface Area ◽  
Integrated Circuit ◽  
Gaas Substrate ◽  
Tuning Range ◽  
Voltage Controlled Oscillator ◽  
Microwave Integrated Circuit ◽  
Monolithic Microwave Integrated Circuit ◽  
Chip Size ◽  
Offset Frequency

A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature.

Design and realization of GaN RF-devices and circuits from 1 to 30 GHz

2010 ◽  
Vol 2 (1) ◽  
pp. 115-120 ◽  
Author(s):  
Jutta Kühn ◽  
Markus Musser ◽  
Friedbert van Raay ◽  
Rudolf Kiefer ◽  
Matthias Seelmann-Eggebert ◽  
...  
Keyword(s):  
High Power ◽  
Integrated Circuit ◽  
Gate Length ◽  
Microwave Integrated Circuit ◽  
Frequency Range ◽  
Monolithic Microwave Integrated Circuit ◽  
X Band ◽  
Rf Devices ◽  
Line Technology

The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

scholarly journals An X-Band low-power and low-phase-noise VCO using bondwire inductor

2009 ◽  
Vol 7 ◽  
pp. 243-247 ◽  
Author(s):  
K. Hu ◽  
F. Herzel ◽  
J. C. Scheytt
Keyword(s):  
Low Power ◽  
Phase Noise ◽  
Flicker Noise ◽  
Satellite Communications ◽  
Voltage Controlled Oscillator ◽  
X Band ◽  
Sige Bicmos ◽  
Bicmos Process ◽  
On Chip ◽  
Low Phase Noise

Abstract. In this paper a low-power low-phase-noise voltage-controlled-oscillator (VCO) has been designed and, fabricated in 0.25 μm SiGe BiCMOS process. The resonator of the VCO is implemented with on-chip MIM capacitors and a single aluminum bondwire. A tail current filter is realized to suppress flicker noise up-conversion. The measured phase noise is −126.6 dBc/Hz at 1 MHz offset from a 7.8 GHz carrier. The figure of merit (FOM) of the VCO is −192.5 dBc/Hz and the VCO core consumes 4 mA from a 3.3 V power supply. To the best of our knowledge, this is the best FOM and the lowest phase noise for bondwire VCOs in the X-band. This VCO will be used for satellite communications.

Theory and Experiments of Injection-Locked Oscillator

2014 ◽  
Vol 602-605 ◽  
pp. 2522-2525
Author(s):  
Yuan Hao ◽  
Li Cai Wang ◽  
Qing Lei Du ◽  
Fei Cheng Wang
Keyword(s):  
Integrated Circuit ◽  
Smart Antenna ◽  
Industrial Applications ◽  
Injection Locking ◽  
Voltage Controlled Oscillator ◽  
Microwave Integrated Circuit ◽  
Experimental Conditions ◽  
Locking Bandwidth ◽  
Smart Antenna Array ◽  
Theory And Experiments

Injection-locking technique is receiving increasing interest in industrial applications, which is especially suitable for smart antenna array, but relative experiments are complicated. The article focuses on the theory and experiment of the technique. Firstly, section 2 reviews the theory of injection-locking technique, and summarizes two useful conclusions on injection-locking bandwidth and phase difference adjusting bound of the phenomena. Secondly, section 3 describes experiments using commercial microwave integrated circuit (MMIC) voltage controlled oscillator (VCO), which is reduces the experimental conditions. Experiments results perform very well.

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