Performance Evaluation of Sub 5 nm GAA NWMBCFET using Silicon Carbide Source/Drain Material

2021 ◽  
pp. 1-6
Author(s):  
S. Ashok Kumar ◽  
J. Charles Pravin
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation

scholarly journals Performance evaluation of GaN and Si based driver circuits for a SiC MOSFET power switch

2021 ◽  
Vol 12 (3) ◽  
pp. 1293
Author(s):  
Martin J. Carra ◽  
Hernan Tacc ◽  
Jose Lipovetzky
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
Gallium Nitride ◽  
Switching Process ◽  
Control Power ◽  
Power Switch ◽  
Power Switches ◽  
Gate Driver ◽  
Output Losses

<p>Silicon Carbide (SiC), new power switches (PSW) require new driver circuits which can take advantage of their new capabilities. In this paper a novel Gallium Nitride (GaN) based gate driver is proposed as a solution to control SiC power switches. The proposed driver is implemented and is performance compared with its silicon (Si) counterparts on a hard switching environment. A thorough evaluation of the energy involved in the switching process is presented showing that the GaN based circuit exhibits similar output losses but reduces the control power needed to operate at a specified frequency.</p>

Performance Evaluation and Expected Challenges of Silicon Carbide Power MOSFETs for High Voltage Applications

2017 ◽  
Vol 897 ◽  
pp. 649-654 ◽  
Author(s):  
Munaf Rahimo
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
High Voltage ◽  
High Power ◽  
Development Trends ◽  
Grid Systems ◽  
Power Mosfets ◽  
Technical Requirements ◽  
Potential Development ◽  
Railway Traction

This paper presents an overview of the main technical requirements of high voltage Silicon Carbide MOSFETs rated above 3300V when compared to the well-established requirements of Silicon IGBTs and diodes. Combined with a performance evaluation of existing 3300 V SiC MOSFET prototypes from ROHM, the paper will discuss the benefits and challenges facing these devices for targeting mainstream and future topologies employed in high power applications such as those in grid systems, railway traction and industrial drives. The paper will also attempt to provide an outlook into potential development trends towards exploiting the full benefits of SiC MOSFETs.

Design and Performance Evaluation of Overcurrent Protection Schemes for Silicon Carbide (SiC) Power MOSFETs

2014 ◽  
Vol 61 (10) ◽  
pp. 5570-5581 ◽  
Author(s):  
Zhiqiang Wang ◽  
Xiaojie Shi ◽  
Yang Xue ◽  
Leon M. Tolbert ◽  
Fei Wang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Performance Evaluation ◽  
Power Mosfets ◽  
Overcurrent Protection ◽  
And Performance
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