A circuit modeling of SAGCM avalanche photodiode with additional layer and nonuniform electric field profile

2014 ◽  
Vol 61 (9) ◽  
pp. 734-745
Author(s):  
Abbas Ghadimi ◽  
Vahid Ahmadi ◽  
Fatemeh Shahshahani
Keyword(s):  
Electric Field ◽  
Avalanche Photodiode ◽  
Nonuniform Electric Field ◽  
Circuit Modeling ◽  
Field Profile ◽  
Additional Layer ◽  
Electric Field Profile

III-NITRIDE/SiC SEPARATE ABSORPTION AND MULTIPLICATION AVALANCHE PHOTODIODES: THE IMPORTANCE OF CONTROLLING POLARIZATION-INDUCED INTERFACE CHARGE

2011 ◽  
Vol 20 (03) ◽  
pp. 487-496
Author(s):  
ANAND V. SAMPATH ◽  
R. W. ENCK ◽  
H. SHEN ◽  
M. WRABACK ◽  
Q. ZHOU ◽  
...  
Keyword(s):  
Electric Field ◽  
Wide Spectrum ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Total Density ◽  
Field Profile ◽  
Device Structure ◽  
Absorption Region ◽  
Interface Charge ◽  
Electric Field Profile

A III-Nitride/ SiC separate absorption and multiplication avalanche photodiode (SAM-APD) offers a novel approach for fabricating high gain photodetectors with tunable absorption over a wide spectrum from the visible to deep ulltraviolet. However, unlike conventional heterojunction SAM APDs, the formation of polarization-induced charge at the hetero-interface arising from spontaneous and piezoelectric polarization can dramatically affect the performance of this detector. In this paper we report on the role of this interface charge on the performance of GaN / SiC SAM APDs. Simulations of the electric field profile within this device structure while biased near avalanche breakdown indicate that the density of positive interface charge may be sufficient to confine the electric field within the SiC multiplication region with negligible punch-through into the GaN absorption region, a distribution that is likely undesirable for efficient collection of photo-generated holes due to the presence of defects at the hetero-interface. Simulations further show that the incorporation of a p -type doped interface charge control layer at the hetero-interface can modify the total density of charge at the interface and allow for the tailoring of the electric field profile within this device. Experimental results are provided that correlate well with the simulation results.

SAGCM avalanche photodiode with additional layer and nonuniform electric field

2013 ◽  
Vol 6 (2) ◽  
pp. 199-209 ◽  
Author(s):  
Abbas Ghadimi ◽  
Vahid Ahmadi ◽  
Fatemeh Shahshahani
Keyword(s):  
Electric Field ◽  
Avalanche Photodiode ◽  
Nonuniform Electric Field ◽  
Additional Layer

Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile

2012 ◽  
Vol 51 (2) ◽  
pp. 02BG03 ◽  
Author(s):  
Masahiro Nada ◽  
Yoshifumi Muramoto ◽  
Haruki Yokoyama ◽  
Naoteru Shigekawa ◽  
Tadao Ishibashi ◽  
...  
Keyword(s):  
Electric Field ◽  
Avalanche Photodiode ◽  
Field Profile ◽  
Electric Field Profile

Inverted InAlAs/InGaAs Avalanche Photodiode with Low–High–Low Electric Field Profile

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BG03 ◽  
Author(s):  
Masahiro Nada ◽  
Yoshifumi Muramoto ◽  
Haruki Yokoyama ◽  
Naoteru Shigekawa ◽  
Tadao Ishibashi ◽  
...  
Keyword(s):  
Electric Field ◽  
Avalanche Photodiode ◽  
Field Profile ◽  
Electric Field Profile

Electric-field profile and current control of a long epitaxial GaAs n layer

1972 ◽  
Vol 8 (4) ◽  
pp. 93 ◽  
Author(s):  
G.A. Swartz ◽  
A. Gonzalez ◽  
A. Dreeben
Keyword(s):  
Electric Field ◽  
Current Control ◽  
Field Profile ◽  
Epitaxial Gaas ◽  
Electric Field Profile

scholarly journals Electric potential differences across auroral generator interfaces

2013 ◽  
Vol 31 (2) ◽  
pp. 251-261 ◽  
Author(s):  
J. De Keyser ◽  
M. Echim
Keyword(s):  
Electric Field ◽  
High Altitude ◽  
Electric Fields ◽  
Electric Potential ◽  
Equilibrium Configuration ◽  
Potential Difference ◽  
Field Profile ◽  
Electric Potential Difference ◽  
Electric Field Profile

Abstract. Strong localized high-altitude auroral electric fields, such as those observed by Cluster, are often associated with magnetospheric interfaces. The type of high-altitude electric field profile (monopolar, bipolar, or more complicated) depends on the properties of the plasmas on either side of the interface, as well as on the total electric potential difference across the structure. The present paper explores the role of this cross-field electric potential difference in the situation where the interface is a tangential discontinuity. A self-consistent Vlasov description is used to determine the equilibrium configuration for different values of the transverse potential difference. A major observation is that there exist limits to the potential difference, beyond which no equilibrium configuration of the interface can be sustained. It is further demonstrated how the plasma densities and temperatures affect the type of electric field profile in the transition, with monopolar electric fields appearing primarily when the temperature contrast is large. These findings strongly support the observed association of monopolar fields with the plasma sheet boundary. The role of shear flow tangent to the interface is also examined.

Transport parameters and electric field profile in amorphous silicon solar cells

1991 ◽  
Vol 23 (2-4) ◽  
pp. 273-281
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Field Profile ◽  
Transport Parameters ◽  
Electric Field Profile
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