WELL-BEHAVED METAL-OXIDE-SEMICONDUCTOR CAPACITOR CHARACTERISTICS OF ZIRCONIUM OXIDE FILMS FABRICATED BY SURFACE SOL-GEL PROCESS

2005 ◽  
Vol 74 (1) ◽  
pp. 3-11 ◽  
Author(s):  
QI-YUE SHAO ◽  
AI-DONG LI ◽  
JIN-BO CHENG ◽  
YI-DONG XIA ◽  
DI WU ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Zirconium Oxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sol Gel Process ◽  
Metal Oxide Semiconductor Capacitor

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor

2019 ◽  
Vol 467-468 ◽  
pp. 1161-1169 ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Changmin Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Defect Generation ◽  
Electrical Stress ◽  
Metal Oxide Semiconductor Capacitor
Sign in / Sign up

Export Citation Format

Share Document