Use of the steady-state photocarrier-grating technique for the study of the surface recombination yelocity of photocarriers and the homogeneity of hydrogenated amorphous silicon films

Philosophical Magazine B ◽

10.1080/13642819308207865 ◽

1993 ◽

Vol 67 (2) ◽

pp. 171-180 ◽

Author(s):

M. Haridim ◽

K. Weiser ◽

H. Mell

Keyword(s):

Steady State ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Surface Recombination ◽

Silicon Films ◽

Hydrogenated Amorphous

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Effect of surface recombination on the spectral dependence of photocurrent in intrinsic hydrogenated amorphous silicon films

Applied Physics Letters ◽

10.1063/1.105949 ◽

1991 ◽

Vol 59 (20) ◽

pp. 2549-2551 ◽

Author(s):

Y. M. Li ◽

R. M. Dawson ◽

R. W. Collins ◽

C. R. Wronski ◽

S. Wiedeman

Keyword(s):

Amorphous Silicon ◽

Spectral Dependence ◽

Hydrogenated Amorphous Silicon ◽

Surface Recombination ◽

Silicon Films ◽

Hydrogenated Amorphous ◽

Effect Of Surface

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Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. ◽

10.1109/pvsc.2002.1190834 ◽

2003 ◽

Author(s):

S. Dauwe ◽

J. Schmidt ◽

R. Hezel

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Surface Recombination ◽

Silicon Wafers ◽

Silicon Films ◽

Type Silicon ◽

Hydrogenated Amorphous

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Investigation of intrinsic defect states in hydrogenated amorphous silicon films using steady-state photoconductivity and sub-bandgap absorption

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) ◽

10.1109/pvsc.1993.347104 ◽

2002 ◽

Author(s):

M. Gunes ◽

Y.M. Li ◽

R.M.A. Dawson ◽

C.M. Fortmann ◽

C.R. Wronski

Keyword(s):

Steady State ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Intrinsic Defect ◽

Defect States ◽

Hydrogenated Amorphous

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The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.347444 ◽

1991 ◽

Vol 69 (12) ◽

pp. 8320-8328 ◽

Author(s):

M. Kunst ◽

H.‐C. Neitzert

Keyword(s):

Amorphous Silicon ◽

Deposition Temperature ◽

Annealing Temperature ◽

Hydrogenated Amorphous Silicon ◽

Optoelectronic Properties ◽

Silicon Films ◽

Hydrogenated Amorphous

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Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films

Applied Physics Letters ◽

10.1063/1.96129 ◽

1985 ◽

Vol 47 (4) ◽

pp. 412-414 ◽

Author(s):

C. E. Michelson ◽

A. V. Gelatos ◽

J. D. Cohen

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Drive Level ◽

Silicon Films ◽

State Densities ◽

Hydrogenated Amorphous ◽

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Catalytic doping of phosphorus and boron atoms on hydrogenated amorphous silicon films

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.04es05 ◽

2016 ◽

Vol 55 (4S) ◽

pp. 04ES05 ◽

Author(s):

Junichi Seto ◽

Keisuke Ohdaira ◽

Hideki Matsumura

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Hydrogenated Amorphous

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Hydrogenated Amorphous Silicon Films Prepared By rf Sputtering In He/H2

10.1117/12.938346 ◽

1986 ◽

Author(s):

M L. Albers ◽

H R. Shanks ◽

J Shinar

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Rf Sputtering ◽

Silicon Films ◽

Hydrogenated Amorphous

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Effects of silicon–hydrogen bond characteristics on the crystallization of hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.582049 ◽

1999 ◽

Vol 17 (6) ◽

pp. 3240-3245 ◽

Author(s):

Hae-Yeol Kim ◽

Jae-Beom Choi ◽

Jai-Young Lee

Keyword(s):

Hydrogen Bond ◽

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Silicon Films ◽

Hydrogenated Amorphous ◽

Bond Characteristics

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Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques

Journal of Non-Crystalline Solids ◽

10.1016/s0022-3093(99)00840-6 ◽

2000 ◽

Vol 266-269 ◽

pp. 304-308 ◽

Author(s):

Mehmet Güneş ◽

Robert E Johanson ◽

S.O Kasap

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Conductance Fluctuations ◽

Hydrogenated Amorphous ◽

Deposition Techniques

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Photoconductivity and trapping parameters in hydrogenated amorphous silicon films

Materials Chemistry and Physics ◽

10.1016/0254-0584(82)90027-x ◽

1983 ◽

Vol 9 (1-3) ◽

pp. 295-300

Author(s):

S. Galassini ◽

G. Micocci ◽

C. Pennetta ◽

A. Rizzo ◽

A. Tepore ◽

...

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Hydrogenated Amorphous

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