Glancing incidence diffraction studies of titanium carbide single crystal surfaces in ultra high vacuum environment

We report on the systematic exploration of electronic and structural changes of Nb-doped rutile TiO2(110) single crystal surfaces due to the thermoreduction under ultra-high vacuum conditions (without sputtering), with comparison to undoped TiO2(110) crystals.

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Heteroepitaxial Growth of MgO Films on NiO(100) Single Crystal Surfaces

MRS Proceedings ◽

10.1557/proc-357-177 ◽

1994 ◽

Vol 357 ◽

Cited By ~ 3

Author(s):

S. Imaduddin ◽

A.M. Davidson ◽

R.J. Lad

Keyword(s):

Single Crystal ◽

Lattice Mismatch ◽

High Vacuum ◽

Ultra High Vacuum ◽

Heteroepitaxial Growth ◽

Crystal Surfaces ◽

Single Crystal Surfaces ◽

Oxygen Anions ◽

Mgo Layers

AbstractEpitaxial MgO layers were grown on cleaved NiO(100) single crystal surfaces. The less than 1% lattice mismatch between MgO and NiO allows almost ideal epitaxy of MgO at 100°C. The epitaxial films were created by dosing Mg onto stoichiometric NiO(100) both in ultra-high vacuum (UHV) and in an O2 atmosphere (5×10−7 Torr). Chemical interactions at the resulting interfaces were studied using XPS. When Mg is dosed onto NiO(100) in UHV, MgO forms by interacting with oxygen anions in the NiO substrate thereby reducing the nickel cations. Metallic Mg layers begin to form upon subsequent dosing. When Mg is deposited in O2, epitaxial MgO(100) layers grow to a thickness of at least 50Å as confirmed by in situ RHEED and LEED observations. Negligible intermixing between the MgO and NiO is observed during growth at 100°C and on subsequent annealing in UHV up to 600°C.

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Morphological effect of epitaxial Ag films with thickness of the order of nanometres on the tribological properties of a single-crystal silicon surface in an ultra-high-vacuum environment

Proceedings of the Institution of Mechanical Engineers Part J Journal of Engineering Tribology ◽

10.1243/1350650041762613 ◽

2004 ◽

Vol 218 (4) ◽

pp. 279-292 ◽

Cited By ~ 5

Author(s):

M Goto ◽

T Nakahara ◽

F Honda

Keyword(s):

Single Crystal ◽

Tribological Properties ◽

Silicon Surface ◽

High Vacuum ◽

Single Crystal Silicon ◽

Ultra High Vacuum ◽

Crystal Silicon ◽

Morphological Effect ◽

High Vacuum Environment

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The Use of Leed for the Characterization of Surface Damage from Pulsed Laser Irradiation

MRS Proceedings ◽

10.1557/proc-48-3 ◽

1985 ◽

Vol 48 ◽

Cited By ~ 2

Author(s):

Aubrey L. Helms ◽

Chin-Chen Cho ◽

Steven L. Bernasek ◽

Clifton W. Draper

Keyword(s):

Thermal Stresses ◽

Profile Analysis ◽

High Vacuum ◽

Surface Damage ◽

Laser Pulses ◽

Ultra High Vacuum ◽

Crystal Surfaces ◽

Single Crystal Surfaces ◽

Laser Fluences ◽

Dislocation Sources

ABSTRACTLow Energy Electron Diffraction (LEED)-Spot Profile Analysis and Auger Electron Spectroscopy (AES) have been used to study the response of Mo(100) single crystal surfaces to Q-switched, frequency doubled Nd:YAG laser pulses. The experiments were conducted in a special ultra-high vacuum (UHV) system which allowed the surfaces to be irradiated under controlled conditions. Laser fluences both above and below the melt threshold were employed. For the melted surfaces, good epitaxial regrowth was observed. The spot profile analysis indicates the formation of random islands on the surfaces. Surfaces which had been previously disordered by 3 KeV Ar+ implantation were laser surface melted and observed to regrow epitaxially as has been observed in the case of ion implanted silicon. The formation of the islands and stepped structures is explained by considering the activation of dislocation sources by the induced thermal stresses resulting in slip.

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Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069272 ◽

1970 ◽

Vol 28 ◽

pp. 456-457

Author(s):

L. E. Murr ◽

G. Wong

Keyword(s):

Single Crystal ◽

High Vacuum ◽

Ultra High Vacuum ◽

High Rate ◽

Flash Evaporation ◽

Optimum Load ◽

Single Crystal Films ◽

Crystal Films ◽

A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

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