Raman Spectra of Molecularly-Ordered 1-TNATA Thin Films and Organic Electroluminescence Device Properties

2009 ◽  
Vol 498 (1) ◽  
pp. 193-202 ◽  
Author(s):  
Youngson Choe ◽  
Young-Rae Cho ◽  
Dosoon Kang ◽  
Wonho Kim ◽  
Dae-Won Park
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Organic Electroluminescence ◽  
Electroluminescence Device ◽  
Device Properties

Laser Induced Oxidation Effects in Bismuth Thin Films

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Laser Irradiation ◽  
Raman Spectra ◽  
Exposure Time ◽  
Oxidation Process ◽  
Energy Dispersion Spectroscopy ◽  
Irradiation Power ◽  
Pure Bismuth ◽  
532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

scholarly journals The Raman Spectra of Aligned Thin Films of Nematic Liquid Crystals

1980 ◽  
Vol 53 (11) ◽  
pp. 3054-3058 ◽  
Author(s):  
Haruka Yamada ◽  
Keiji Fukumura ◽  
Bun-ichi Tamamushi
Keyword(s):  
Thin Films ◽  
Liquid Crystals ◽  
Raman Spectra ◽  
Nematic Liquid Crystals

scholarly journals Abnormal Raman spectra of PbTe crystalline thin films grown by molecular beam epitaxy

2006 ◽  
Vol 55 (4) ◽  
pp. 2021
Author(s):  
Cao Chun-Fang ◽  
Wu Hui-Zhen ◽  
Si Jian-Xiao ◽  
Xu Tian-Ning ◽  
Chen Jing ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Raman Spectra ◽  
Molecular Beam

Thickness-dependent Raman Spectra of CVD-grown WSe$_2$ Thin Films

2015 ◽  
Vol 65 (7) ◽  
pp. 633-637 ◽  
Author(s):  
Kun Hee KANG ◽  
Byoung Ki CHOI ◽  
Jiho KIM ◽  
Young Jun CHANG*
Keyword(s):  
Thin Films ◽  
Raman Spectra

scholarly journals Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

2016 ◽  
Vol 34 (3) ◽  
pp. 676-683 ◽  
Author(s):  
R. Skonieczny ◽  
P. Popielarski ◽  
W. Bała ◽  
K. Fabisiak ◽  
K. Paprocki ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Silicon Substrate ◽  
Thin Layers ◽  
Excitation Wavelength ◽  
Type Silicon ◽  
Atomic Force ◽  
Before And After ◽  
Evaporation Technique ◽  
Polarized Raman

AbstractThe cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

Platelet Adhesion Study and Characteristic of Hydrogenated Carbon Films Synthesized by PIII-D

2005 ◽  
Vol 288-289 ◽  
pp. 323-326 ◽  
Author(s):  
Feng Wen ◽  
Nan Huang ◽  
H. Sun ◽  
Ping Yang ◽  
Jin Wang
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Raman Spectra ◽  
Room Temperature ◽  
Platelet Adhesion ◽  
Carbon Films ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Composition And Structure ◽  
Amorphous Hydrogenated Carbon

Amorphous hydrogenated carbon (a-C:H) thin films were deposited on silicon wafers and Ti6Al4V substrate using plasma ion immersion implantation and deposition (PIII-D) at room temperature (R.T.). The composition and structure of a-C:H films were employed by X-ray photoelectron spectra (XPS) and Raman spectra. Nano-indenter tests measured the hardness of the films. In addition, wettability and bloodcompatibility were investigated. In this paper, the effects of hydrogen content on structure, mechanical properties, surface wettability and haemocompatibility were discussed.

Sign in / Sign up

Export Citation Format

Share Document