scholarly journals Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

2016 ◽  
Vol 34 (3) ◽  
pp. 676-683 ◽  
Author(s):  
R. Skonieczny ◽  
P. Popielarski ◽  
W. Bała ◽  
K. Fabisiak ◽  
K. Paprocki ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Silicon Substrate ◽  
Thin Layers ◽  
Excitation Wavelength ◽  
Type Silicon ◽  
Atomic Force ◽  
Before And After ◽  
Evaporation Technique ◽  
Polarized Raman

AbstractThe cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

scholarly journals The Physicochemical and Antibacterial Properties of Chitosan-Based Materials Modified with Phenolic Acids Irradiated by UVC Light

2021 ◽  
Vol 22 (12) ◽  
pp. 6472
Author(s):  
Beata Kaczmarek-Szczepańska ◽  
Marcin Wekwejt ◽  
Olha Mazur ◽  
Lidia Zasada ◽  
Anna Pałubicka ◽  
...  
Keyword(s):  
Thin Films ◽  
Antimicrobial Activity ◽  
Ferulic Acid ◽  
Phenolic Acid ◽  
Food Packaging ◽  
Antibacterial Properties ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

This paper concerns the physicochemical properties of chitosan/phenolic acid thin films irradiated by ultraviolet radiation with wavelengths between 200 and 290 nm (UVC) light. We investigated the preparation and characterization of thin films based on chitosan (CTS) with tannic (TA), caffeic (CA) and ferulic acid (FA) addition as potential food-packaging materials. Such materials were then exposed to the UVC light (254 nm) for 1 and 2 h to perform the sterilization process. Different properties of thin films before and after irradiation were determined by various methods such as Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), differential scanning calorimeter (DSC), mechanical properties and by the surface free energy determination. Moreover, the antimicrobial activity of the films and their potential to reduce the risk of contamination was assessed. The results showed that the phenolic acid improving properties of chitosan-based films, short UVC radiation may be used as sterilization method for those films, and also that the addition of ferulic acid obtains effective antimicrobial activity, which have great benefit for food packing applications.

Electric Control of Friction on Silicon Studied by Atomic Force Microscope

NANO ◽  
2015 ◽  
Vol 10 (03) ◽  
pp. 1550038 ◽  
Author(s):  
Yan Jiang ◽  
Lili Yue ◽  
Boshen Yan ◽  
Xi Liu ◽  
Xiaofei Yang ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Adhesion Forces ◽  
Friction Forces ◽  
Type Silicon ◽  
Atomic Force ◽  
Electric Control ◽  
Before And After ◽  
Track Line

We investigated friction on an n-type silicon surface using an atomic force microscope when a bias voltage was applied to the sample. Friction forces on the same track line were measured before and after the bias voltages were applied and it was found that the friction forces in n-type silicon can be tuned reversibly with the bias voltage. The dependence of adhesion forces between the silicon nitride tip and Si sample on the bias voltages approximately follows a parabolic law due to electrostatic force, which results in a significant increase in the friction force at an applied electric field.

scholarly journals Optical Properties and Microstructure of TiNxOy and TiN Thin Films before and after Annealing at Different Conditions

Coatings ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 22 ◽  
Author(s):  
Hanan A. Abd El-Fattah ◽  
Iman S. El-Mahallawi ◽  
Mostafa H. Shazly ◽  
Waleed A. Khalifa
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pure Titanium ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Optical Absorbance ◽  
Atomic Force ◽  
Before And After ◽  
Tin Thin Films ◽  
Steel Substrates

TiN and TiNxOy thin films share many properties such as electrical and optical properties. In this work, a comparison is conducted between TiN (with and without annealing at 400 °C in air and vacuum) and TiNxOy thin films deposited by using RF magnetron sputtering with the same pure titanium target, Argon (Ar) flow rate, nitrogen flow rates, and deposition time on stainless steel substrates. In the case of TiNxOy thin film, oxygen was pumped in addition. The optical properties of the thin films were characterized by spectrophotometer, and Fourier transform infrared spectroscopy (FTIR). The morphology, topography, and structure were studied by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD). The results show that both thin films have metal-like behavior with some similarities in phases, structure, and microstructure and differences in optical absorbance. It is shown that the absorbance of TiN (after vacuum-annealing) and TiNxOy have close absorbance percentages at the visible range of light with an unstable profile, while after air-annealing the optical absorbance of TiN exceeds that of TiNxOy. This work introduces annealed TiN thin films as a candidate solar selective absorber at high-temperature applications alternatively to TiNxOy.

Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

2016 ◽  
Author(s):  
A. K. M. Muaz ◽  
U. Hashim ◽  
M. K. Md. Arshad ◽  
A. R. Ruslinda ◽  
R. M. Ayub ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Tio2 Thin Films ◽  
Type Silicon ◽  
P Type

Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements

2003 ◽  
Vol 10 (02n03) ◽  
pp. 537-541 ◽  
Author(s):  
Y. Takeda ◽  
M. Tabuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Low Temperature ◽  
Crystalline Structure ◽  
Thin Layers ◽  
X Ray ◽  
Atomic Force ◽  
Crystal Truncation Rod ◽  
Before And After ◽  
Afm Observation

Crystalline and morphological quality of low-temperature (LT)-deposited and annealed AlN and GaN thin layers were investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements and atomic force microscope (AFM) observation. It was revealed that the LT-AlN layer was more uniform in terms of the crystalline structure and the layer thickness than the LT-GaN layer, before and after annealing. It suggests that LT-AlN is more suitable as a buffer layer between sapphire substrate and GaN.

Nanostructured Gold Thin Films: Young Modulus Measurement

2003 ◽  
Vol 10 (04) ◽  
pp. 571-575 ◽  
Author(s):  
M. C. Salvadori ◽  
A. R. Vaz ◽  
L. L. Melo ◽  
M. Cattani
Keyword(s):  
Thin Films ◽  
Beam Theory ◽  
Young Modulus ◽  
Atomic Force ◽  
Resonance Frequencies ◽  
Before And After ◽  
Nanostructured Gold ◽  
Modulus Measurement ◽  
Gold Thin Films ◽  
Bulk Elastic Modulus

We have uniformly coated the cantilever of an atomic force microscope (AFM) with gold thin films. These films are nanostructured with thickness going from 19 to 62 nm. The resonance frequencies of this cantilever have been measured, before and after the Au coatings. Taking into account these frequencies and the vibrating beam theory, we determined the Young modulus of the Au films, obtaining E2 = 69.1 ± 2.6 GPa , i.e. about 12% lower than the respective bulk elastic modulus.

The Effects of Kcn Etching on Cu-Rich Epitaxial CuInSe2 Thin Films

1996 ◽  
Vol 426 ◽  
Author(s):  
P. Fons ◽  
S. Nikl ◽  
A. Yamada ◽  
M. Nishitanp ◽  
T. Wada ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Region ◽  
Etching Time ◽  
Cation Sublattice ◽  
Epitaxial Thin Films ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Integrated Intensity

AbstractA series of Cu-rich CuInSe2 epitaxial thin films were grown by molecular beam epitaxy on GaAs(001) substrates from elemental sources at a growth temperature of 450 °C. All samples were grown with an excess of Cu. Electron microprobe analysis (EPMA) indicated a Cu/ In ratio of about 2.1–2.6 in the as-grown films. Additionally, the Se/ (In+Cu) ratio was observed to be ∼0.95 indicating that the films were slightly Se poor. These Cu-rich samples were etched in a KCN solution for periods ranging from 30 seconds to 3 minutes. EPMA measurements indicated that the bulk Cu/ In ratio was reduced to ∼0.92 in all films regardless of etching time. Atomic force microscopy (AFM) was used to characterize the topology of each sample before and after etching. These measurements indicated that the precipitates present on the as-grown films were removed and large nearly isotropic holes were etched into the sample to a depth of over 1000 Å even for etching times as short as 30 seconds. The samples were also evaluated both before and after etching using a Phillips MRD diffractometer with parallel beam optics and a 18,000 watt Cu rotating anode X-ray source in the chalcopyrite [001], [101], and [112] directions. A peak was observed at ∼15 degrees in the [001] scan after etching consistant with the presence of the ordered vacancy compound, CuIn3Se5. Additionally the integrated intensity ratios of the chalcopyrite (202) reflection to the chalcopyrite (101) reflection ∝(fCu-fIn)2 along the [101] direction indicated the presence of a near-surface region containing cation sublattice disorder that was subsequently removed by the etching process.

scholarly journals Raman spectroscopy of optical properties in CdS thin films

2015 ◽  
Vol 47 (2) ◽  
pp. 145-152 ◽  
Author(s):  
J. Trajic ◽  
M. Gilic ◽  
N. Romcevic ◽  
M. Romcevic ◽  
G. Stanisic ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Optical Properties ◽  
Effective Permittivity ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Optical ◽  
Cds Thin Films ◽  
Evaporation Technique

Properties of CdS thin films were investigated applying atomic force microscopy (AFM) and Raman spectroscopy. CdS thin films were prepared by using thermal evaporation technique under base pressure 2 x 10-5 torr. The quality of these films was investigated by AFM spectroscopy. We apply Raman scattering to investigate optical properties of CdS thin films, and reveal existence of surface optical phonon (SOP) mode at 297 cm-1. Effective permittivity of mixture were modeled by Maxwell - Garnet approximation.

scholarly journals Study of the Influence of Annealing Temperature on the Structural and Optical Properties of ZnTe Prepared by Vacuum Thermal Evaporation Technique

2018 ◽  
Vol 31 (1) ◽  
pp. 50
Author(s):  
Sarmad M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
High Smoothness ◽  
Evaporation Technique ◽  
20 Nm

   The ZnTe alloy was prepared as  deposited thin films on the glass substrates at a thickness of 400±20 nm using vacuum evaporation technique at pressure (1 × 10-5) mbar and room temperature. Then the thin films under vacuum (2 × 10-3 mbar) were annealing at (RT,100 and 300) °C for one hour. The structural properties were studied by using X-ray diffraction and AFM, the results show that the thin films had approached the single crystalline in the direction (111) as preferred orientation of the structure zinc-blende for cubic type, with small peaks of tellurium (Te) element for all prepared thin films. The calculated crystallite size (Cs) decreased with the increase in the annealing temperature, from (25) nm before the annealing to (21) nm after the annealing. The images of atomic force microscopy of all thin films appeared a homogenous structure and high smoothness through roughness values ​​that increased slightly from (1.4) nm to (3.4) nm. The optical properties of the ZnTe at (RT,100 and 300) °C were studied transmittance and absorbance spectrum as a function of the wavelength. The energy gap was found about (2.4) eV for the thin films before the annealing and increased slightly to (2.5) eV after annealing at 300 °C  

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