Field Evaluation of an Engineering Control for Respirable Crystalline Silica Exposures During Mortar Removal

2007 ◽  
Vol 4 (11) ◽  
pp. D120-D121 ◽  
Author(s):  
William S. Beckett ◽  
Jason Lyons
2017 ◽  
Vol 67 (4) ◽  
pp. 407
Author(s):  
Zahir Ahmed Ansari ◽  
Avnish Kumar ◽  
Rajeev Marathe ◽  
Madhav Ji Nigam

Search and tracking in dynamic condition, rapid re-targeting, precision pointing and long range engagement in day and night condition are core requisite of stabilised sighting systems used for combat vehicles. Complex battle field requires integrated fire control system with stabilised sighting system as its main constituent. It facilitates quick reaction to fire control system and provides vital edge in the battlefield scenario. Precision gimbal design, optics design, embedded engineering, control system, electro-optical sensors, target detection and tracking, panorama generation, auto-alerting, digital image stabilisation, image fusion and integration are important aspects of sighting system development. In this paper, design considerations for a state of art stabilised sighting system have been presented including laboratory and field evaluation methods for such systems.


Author(s):  
Harry A. Atwater ◽  
C.M. Yang ◽  
K.V. Shcheglov

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.


1992 ◽  
Vol 11 (1) ◽  
pp. 27-37 ◽  
Author(s):  
Peter E. Loeb ◽  
Steven C. Mirabello ◽  
James R. Andrews
Keyword(s):  

1992 ◽  
Vol 11 (1) ◽  
pp. 1-25 ◽  
Author(s):  
Steven C. Mirabello ◽  
Peter E. Loeb ◽  
James R. Andrews
Keyword(s):  

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