scholarly journals The effect of substrate temperature on Cu(In,Ga)Se2 layers deposited by dual thermal evaporation

2021 ◽  
Vol 15 (1) ◽  
pp. 442-448
Author(s):  
S. N. Alamri ◽  
A.S. Almohammadi
Keyword(s):  
Substrate Temperature ◽  
Thermal Evaporation

Control of porosity in fluoride thin films prepared by vapor deposition

2007 ◽  
Vol 22 (7) ◽  
pp. 2012-2016 ◽  
Author(s):  
Hakkwan Kim ◽  
Alexander H. King
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Lithium Fluoride ◽  
Quartz Crystal ◽  
Thermal Evaporation ◽  
Magnesium Fluoride ◽  
Crystal Thickness ◽  
Glass Substrates ◽  
Atomic Force

We have measured the porosity in thin films of lithium fluoride (LiF), magnesium fluoride (MgF2), barium fluoride (BaF2), and calcium fluoride (CaF2) as a function of the substrate temperature for films deposited by thermal evaporation onto glass substrates. The amount of porosity in the thin films was measured using an atomic force microscope and a quartz crystal thickness monitor. The porosity was very sensitive to the substrate temperature and decreased as the substrate temperature increased. Consistent behavior was observed among all of the materials in this study.

PREPARATION OF ADHERENT MnSix FILMS

2002 ◽  
Vol 16 (07) ◽  
pp. 205-215 ◽  
Author(s):  
Q. R. HOU ◽  
Z. M. WANG ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Solid Phase ◽  
Electron Beam Evaporation ◽  
Solid Phase Reaction ◽  
Phase Reaction ◽  
Reactive Deposition ◽  
Glass Substrates ◽  
Manganese Silicide

The adhesion of manganese silicide ( MnSi x) films on silicon and glass substrates is studied by using the micro-scratch method. The films were prepared by electron beam evaporation and thermal evaporation. To improve adhesion of the films, several techniques including ion bombardment, increasing substrate temperature, and insertion of a silicon intermediate layer were used. Finally, adherent MnSi x(x~1.7) films were prepared through solid phase reaction as well as reactive deposition. The hardness and modulus of the MnSi x(x~1.7) film were measured by a nano-indenter and the values are 8.8±1.0 GPa and 141±15 GPa, respectively.

Preparation of SnS thin films with gear-like sheet appearance by close-spaced vacuum thermal evaporation

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744054 ◽  
Author(s):  
Zhangpeng Shao ◽  
Chengwu Shi ◽  
Junjun Chen ◽  
Yanru Zhang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Near Infrared ◽  
Thermal Evaporation ◽  
Atomic Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Influence Of Substrate ◽  
Sns Thin Films

SnS thin films with gear-like sheet appearance were successfully prepared by close-spaced vacuum thermal evaporation using SnS powders as a source. The influence of substrate temperature on the surface morphology, chemical composition, crystal structure and optical property of SnS thin films was investigated by scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction and ultraviolet–visible–near infrared spectroscopy. The results revealed that serration architecture appeared obviously in the edge of the SnS sheet and the strongest peak at 2[Formula: see text]=31.63[Formula: see text] was broadened and many shoulder peaks were observed with increasing substrate temperature. The atomic ratio of Sn to S increased from 1:1.08 to 1:1.20, the grain size became slightly smaller and the optical absorption edge had a blueshift in the SnS thin film with decreasing substrate temperature.

Smart Windows with Different Thicknesses of V2O5 as Ion Storage Layers

2010 ◽  
Vol 663-665 ◽  
pp. 743-750 ◽  
Author(s):  
Saleh N. Alamri ◽  
Ahamed A. Joraid
Keyword(s):  
Electron Beam ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Electron Beam Evaporation ◽  
Smart Windows ◽  
Electron Transitions ◽  
Ion Storage ◽  
Variation Curve ◽  
Bleached State

Smart windows were fabricated with different thicknesses of amorphous V2O5, which acts as an ion storage layer. In these devices, V2O5 was deposited by thermal evaporation at a substrate temperature of 200 oC, and an electrochromic layer (WO3) was deposited by electron beam evaporation at a substrate temperature of 250 oC. Both layers were amorphous. V2O5 was found to exhibit direct-forbidden electron transitions, whereas the WO3 layer exhibited indirect-allowed electron transitions. An increase in the thickness of V2O5 from 78 nm to 313 nm reduced the colouration efficiency from 64 to 48 cm2/C, and the time of the transmission variation curve from the coloured state to the bleached state was increased from 82.41 s to 558 s.

SYNTHESIS OF AMORPHOUS SiOx NANOSTRUCTURES

2002 ◽  
Vol 01 (02) ◽  
pp. 149-157 ◽  
Author(s):  
J. Y. LAO ◽  
J. G. WEN ◽  
D. Z. WANG ◽  
Z. F. REN
Keyword(s):  
High Temperature ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Atomic Ratio ◽  
Nucleation Center ◽  
Vapor Density ◽  
Thermal Evaporation Method ◽  
Nanotube Bundle ◽  
Ge Doping ◽  
Bundle Structure

Various amorphous SiO x nanotube structures nucleated by GeOx nanoparticles were synthesized by thermal evaporation method. The presence of Ge does not only nucleate the growth of the SiO x nanomaterials, but also dopes them. The nanostructure morphology is affected by the substrate temperature, source temperature and GeO x vapor density through their effect on the size and lifetime of the nucleation center. In general, low substrate temperature promotes the formation of the nanotube bundle structure with 2–3% atomic ratio of Ge doping, and high temperature produces Ge-free much less bundled nanotubes.

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