SYNTHESIS OF AMORPHOUS SiOx NANOSTRUCTURES

2002 ◽  
Vol 01 (02) ◽  
pp. 149-157 ◽  
Author(s):  
J. Y. LAO ◽  
J. G. WEN ◽  
D. Z. WANG ◽  
Z. F. REN
Keyword(s):  
High Temperature ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Atomic Ratio ◽  
Nucleation Center ◽  
Vapor Density ◽  
Thermal Evaporation Method ◽  
Nanotube Bundle ◽  
Ge Doping ◽  
Bundle Structure

Various amorphous SiO x nanotube structures nucleated by GeOx nanoparticles were synthesized by thermal evaporation method. The presence of Ge does not only nucleate the growth of the SiO x nanomaterials, but also dopes them. The nanostructure morphology is affected by the substrate temperature, source temperature and GeO x vapor density through their effect on the size and lifetime of the nucleation center. In general, low substrate temperature promotes the formation of the nanotube bundle structure with 2–3% atomic ratio of Ge doping, and high temperature produces Ge-free much less bundled nanotubes.

Influence of Deposition Time on the Properties of Highly-Oriented SnS Thin Films Prepared Using the Thermal Evaporation Method

2012 ◽  
Vol 602-604 ◽  
pp. 1409-1412 ◽  
Author(s):  
Patrick. A. Nwofe ◽  
K. T. Ramakrishna Reddy ◽  
Robert W. Miles
Keyword(s):  
Crystal Structure ◽  
Single Phase ◽  
Deposition Time ◽  
Thermal Evaporation ◽  
Atomic Ratio ◽  
Energy Band Gap ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Thermal Evaporation Method ◽  
Sns Thin Films

The influence of deposition time on the properties of SnS films grown using the thermal evaporation was reported. The deposition time was varied between 0.7 – 3 min, keeping other deposition variables constant. The layers showed single phase with orthorhombic crystal structure, exhibiting a strong (040) reflection. With an increase of deposition time, the Sn/S atomic ratio and grain size and the number of crystallites in the layers increased while the dislocation density and bulk resistivity decreased. The increase of crystallinity of the layers was confirmed by the change of strain from tensile to compressive with increasing deposition time. The transmittance of the films were > 70% for deposition time ≤ 1min and decreased drastically otherwise. The energy band gap varied in the range 1.80 - 1.30 eV with the lower values obtained at longer deposition times.

Preparation of SnS thin films with gear-like sheet appearance by close-spaced vacuum thermal evaporation

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744054 ◽  
Author(s):  
Zhangpeng Shao ◽  
Chengwu Shi ◽  
Junjun Chen ◽  
Yanru Zhang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Near Infrared ◽  
Thermal Evaporation ◽  
Atomic Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vacuum Thermal Evaporation ◽  
Influence Of Substrate ◽  
Sns Thin Films

SnS thin films with gear-like sheet appearance were successfully prepared by close-spaced vacuum thermal evaporation using SnS powders as a source. The influence of substrate temperature on the surface morphology, chemical composition, crystal structure and optical property of SnS thin films was investigated by scanning electron microscopy, energy-dispersive spectroscopy, X-ray diffraction and ultraviolet–visible–near infrared spectroscopy. The results revealed that serration architecture appeared obviously in the edge of the SnS sheet and the strongest peak at 2[Formula: see text]=31.63[Formula: see text] was broadened and many shoulder peaks were observed with increasing substrate temperature. The atomic ratio of Sn to S increased from 1:1.08 to 1:1.20, the grain size became slightly smaller and the optical absorption edge had a blueshift in the SnS thin film with decreasing substrate temperature.

scholarly journals Effect of Substrate Temperature on the Thermoelectric Properties of the Sb2Te3Thin Films Deposition by Using Thermal Evaporation Method

2015 ◽  
Vol 2015 ◽  
pp. 1-6
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Cheng-Fu Yang ◽  
Wei Chen
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients ◽  
Thermoelectric Thin Films

The antimony-telluride (Sb2Te3) thermoelectric thin films were prepared on SiO2/Si substrates by thermal evaporation method. The substrate temperature that ranged from room temperature to 150°C was adopted to deposit the Sb2Te3thin films. The effects of substrate temperature on the microstructures and thermoelectric properties of the Sb2Te3thin films were investigated. The crystal structure and surface morphology of the Sb2Te3thin films were characterized by X-ray diffraction analyses and field emission scanning electron microscope observation. The RT-deposited Sb2Te3thin films showed the amorphous phase. Te and Sb2Te3phases were coexisted in the Sb2Te3-based thin films as the substrate temperature was higher than room temperature. The average grain sizes of the Sb2Te3-based thin films were 39 nm, 45 nm, 62 nm, 84 nm, and 108 nm, as the substrate temperatures were 50°C, 75°C, 100°C, 125°C, and 150°C, respectively. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature; we had found that they were critically dependent on the substrate temperature.

scholarly journals Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature

Materials ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 773 ◽  
Author(s):  
Nafiseh Memarian ◽  
Seyeed Rozati ◽  
Isabella Concina ◽  
Alberto Vomiero
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method ◽  
Method Effect ◽  
Cds Thin Films

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

Fabrication and Growth Mechanism of Zn1-xCdxO Nanotubes by Thermal Evaporation Method

2009 ◽  
Vol 24 (5) ◽  
pp. 998-1002
Author(s):  
Bo LIU ◽  
Fa-Zhan WANG ◽  
Gu-Zhong ZHANG ◽  
Chao ZHAO ◽  
Si-Cong YUAN
Keyword(s):  
Growth Mechanism ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Evaporation Method
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