Electron-electron interaction in doped semiconductors including polar LO phonon effects: application to hot-electron spectrometers in GaAs

1986 ◽  
Vol 19 (32) ◽  
pp. 6357-6371 ◽  
Author(s):  
J M Rorison ◽  
D C Herbert
Keyword(s):  
Electron Interaction ◽  
Hot Electron ◽  
Doped Semiconductors

scholarly journals Enhancement of laser-driven ion acceleration in non-periodic nanostructured targets

2020 ◽  
Vol 86 (1) ◽  
Author(s):  
J. Ferri ◽  
I. Thiele ◽  
E. Siminos ◽  
L. Gremillet ◽  
E. Smetanina ◽  
...  
Keyword(s):  
Effective Interaction ◽  
Areal Density ◽  
Electron Interaction ◽  
Ion Acceleration ◽  
Manufacturing Constraints ◽  
Hot Electron ◽  
Particle In Cell ◽  
Scale Thickness ◽  
Electron Generation ◽  
Performance Results

Using particle-in-cell simulations, we demonstrate an improvement of the target-normal-sheath acceleration (TNSA) of protons in non-periodically nanostructured targets with micron-scale thickness. Compared to standard flat foils, an increase in the proton cutoff energy by up to a factor of two is observed in foils coated with nanocones or perforated with nanoholes. The latter nano-perforated foils yield the highest enhancement, which we show to be robust over a broad range of foil thicknesses and hole diameters. The improvement of TNSA performance results from more efficient hot-electron generation, caused by a more complex laser–electron interaction geometry and increased effective interaction area and duration. We show that TNSA is optimized for a nanohole distribution of relatively low areal density and that is not required to be periodic, thus relaxing the manufacturing constraints.

FAR-INFRARED EMISSION BY HEATED ELECTRONS IN A TWO-DIMENSIONAL SEMICONDUCTOR SYSTEM

1996 ◽  
Vol 10 (06) ◽  
pp. 181-188 ◽  
Author(s):  
W. XU
Keyword(s):  
Phonon Scattering ◽  
Far Infrared ◽  
Infrared Emission ◽  
Growth Direction ◽  
Zero Magnetic Field ◽  
Electron Interaction ◽  
Two Dimensional ◽  
Hot Electron ◽  
Single Quantum Well ◽  
Energy Excitation

In this letter, we present a detailed theoretical study that explores the possibility to use AlGaAs/GaAs-based two-dimensional semiconductor systems (2DSSs) as the far-infrared (FIR) generators at zero-magnetic field and by electrically heated electrons. A simple model from which the intensity of FIR radiation can be calculated as a function of photon frequency is developed by calculating the electron-energy-loss induced by hot-electron interaction with electromagnetic field, mediated by electron-phonon scattering. The main results obtained from the present study are: (1) in a 2DSS, FIR radiation is mainly generated among the different electronic subbands; (2) the polarization of FIR generated from a 2DSS is along the growth direction; (3) the intensity of FIR radiation increases rapidly with increasing energy excitation, i.e., with electron temperature; (4) the frequency of electromagnetic wave generated is around ω~|εm– εn|/ħ with εn the electronic subband energy; and (5) for an AlGaAs-GaAs-AlGaAs single quantum well structure, the frequency of the FIR emission can be tuned by varying the width of the well layer. We have also studied the influence of electron density, lattice temperature, etc. on the FIR emission by heated electrons in 2DSSs.

scholarly journals EFFECT OF ELECTRON-ELECTRON INTERACTION NEAR THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS STUDIED WITHIN THE LOCAL DENSITY APPROXIMATION

2012 ◽  
Vol 11 ◽  
pp. 90-95 ◽  
Author(s):  
YOSUKE HARASHIMA ◽  
KEITH SLEVIN
Keyword(s):  
Local Density Approximation ◽  
Density Functional ◽  
Local Density ◽  
Insulator Transition ◽  
Electron Interaction ◽  
Density Approximation ◽  
Metal Insulator Transition ◽  
Functional Theory ◽  
Doped Semiconductors ◽  
Metal Insulator

We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron interactions between the carriers using density functional theory in the local density approximation. Preliminary results suggest that the model exhibits a metal-insulator transition.

Sign in / Sign up

Export Citation Format

Share Document