Epitaxial growth of Ag films on InP (001) by atomic beam epitaxy in ultra-high vacuum

1977 ◽  
Vol 10 (10) ◽  
pp. L135-L138 ◽  
Author(s):  
R F C Farrow
Keyword(s):  
Epitaxial Growth ◽  
Atomic Beam ◽  
High Vacuum ◽  
Ultra High Vacuum

Ultra-high-vacuum epitaxial growth of MgB2(0001) thin films on Mg(0001) via molecular beam epitaxy

2004 ◽  
Vol 16 (33) ◽  
pp. S3451-S3458 ◽  
Author(s):  
R Macovez ◽  
C Cepek ◽  
M Sancrotti ◽  
A Goldoni ◽  
L Petaccia ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Vacuum ◽  
Ultra High Vacuum

Epitaxial Growth of Near Noble Silicides on (111)Si by Rapid Thermal Annealing

1986 ◽  
Vol 74 ◽  
Author(s):  
H. C. Cheng ◽  
I. C. Wu ◽  
L. J. Chen
Keyword(s):  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Furnace Annealing ◽  
Transmission Electron ◽  
Vacuum Method ◽  
Comparable Quality

AbstractThe epitaxial growth of near noble silicides, including CoSi2, NiSi2, FeSi2, Pd2 Si, and PtSi on (111)Si, by rapid thermal annealing was studied by transmission electron microscopy. Single-crystalline CoSi2 was formed on (111)Si in the solid phase epitaxy regime by a non-ultra-high vacuum method. The effect on gas ambient was found to be of critical importance on the growth of single-crystal CoSi2 on (111)Si. The best NiSi2, FeSi2, Pd2 Si, and PtSi epitaxy grown on (111)Si by rapid thermal annealing were found to be of comparable quality to those grown by conventional furnace annealing.

Epitaxial growth of cubic ZnS by evaporation in ultra-high vacuum

1968 ◽  
Vol 1 (1) ◽  
pp. 11-14 ◽  
Author(s):  
B A Unvala ◽  
J M Woodcock ◽  
D B Holt
Keyword(s):  
Epitaxial Growth ◽  
High Vacuum ◽  
Ultra High Vacuum

High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition

2001 ◽  
Vol 90 (1) ◽  
pp. 512-514 ◽  
Author(s):  
S. Guha ◽  
E. Cartier ◽  
N. A. Bojarczuk ◽  
J. Bruley ◽  
L. Gignac ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Atomic Beam ◽  
Gate Dielectrics ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Atomic Beam Deposition ◽  
Beam Deposition

scholarly journals Molecular Beam Epitaxial Growth Behaviors of Zn1-xCdxSe on the GaAs(110) Surface Cleaved in Ultra High Vacuum.

Shinku ◽  
1997 ◽  
Vol 40 (3) ◽  
pp. 317-320
Author(s):  
Hyun-Chul KO ◽  
Doo-Cheol PARK ◽  
Yoichi KAWAKAMI ◽  
Shizuo FUJITA ◽  
Shigeo FUJITA
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

The Growth and Characterisation of Ir Silicide Films on (111)Si

1990 ◽  
Vol 202 ◽  
Author(s):  
M.A. Lawn ◽  
R.G. Elliman ◽  
M.C. Ridgway ◽  
R. Leckey ◽  
J.D. Riley
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Transmission Electron Microscope ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Grain Structure ◽  
Si Substrates ◽  
Fine Grain ◽  
Transmission Electron

ABSTRACTA study of the growth of thin Ir silicide films on (111)Si substrates has been undertaken. Thin (2.0nm) ir films deposited onto Si substrates under ultra-high vacuum conditions have been observed to display remarkable film continuity and fine grain structure (lnm). In situ annealing at 1000°C resulted in the formation of large regions (>10µm) of epitaxial IrSi3 islands (∼1µm) with identical epitaxial orientations. By means of annealing an as-deposited (2.0nm) Ir film stepwise to 1000°C within a transmission electron microscope the evolution of Ir silicide phases and morphologies were observed. The epitaxial growth of the semiconducting IrSi1.75 phase is reported along with the formation of Ir silicide islands at temperatures between 700°C and 800°C.

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