Optical emission and its decay time of type-II InP/GaAs quantum dots

2010 ◽  
Vol 43 (4) ◽  
pp. 045303 ◽  
Author(s):  
P F Gomes ◽  
M P F de Godoy ◽  
G O Dias ◽  
F Iikawa ◽  
M J S P Brasil ◽  
...  
Author(s):  
Guncem Ozgun Eren ◽  
Sadra Sadeghi ◽  
Houman Bahmani Jalali ◽  
Maximilian Ritter ◽  
Mertcan Han ◽  
...  
Keyword(s):  
Type Ii ◽  

2019 ◽  
Vol 15 (S356) ◽  
pp. 225-225
Author(s):  
Dalya Baron

AbstractIn this talk I will show that multi-wavelength observations can provide novel constraints on the properties of ionized gas outflows in AGN. I will present evidence that the infrared emission in active galaxies includes a contribution from dust which is mixed with the outflow and is heated by the AGN. We detect this infrared component in thousands of AGN for the first time, and use it to constrain the outflow location. By combining this with optical emission lines, we constrain the mass outflow rates and energetics in a sample of 234 type II AGN, the largest such sample to date. The key ingredient of our new outflow measurements is a novel method to estimate the electron density using the ionization parameter and location of the flow. The inferred electron densities, ∼104.5 cm−3, are two orders of magnitude larger than found in most other cases of ionized outflows. We argue that the discrepancy is due to the fact that the commonly-used [SII]-based method underestimates the true density by a large factor. As a result, the inferred mass outflow rates and kinetic coupling efficiencies are 1–2 orders of magnitude lower than previous estimates, and 3–4 orders of magnitude lower than the typical requirement in hydrodynamic cosmological simulations. These results have significant implications for the relative importance of ionized outflows feedback in this population.


2008 ◽  
Vol 93 (3) ◽  
pp. 033107 ◽  
Author(s):  
Wen-Hao Chang ◽  
Yu-An Liao ◽  
Wei-Ting Hsu ◽  
Ming-Chih Lee ◽  
Pei-Chin Chiu ◽  
...  

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.


2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  

2012 ◽  
Vol 3 (15) ◽  
pp. 2052-2058 ◽  
Author(s):  
Shengye Jin ◽  
Jun Zhang ◽  
Richard D. Schaller ◽  
Tijana Rajh ◽  
Gary P. Wiederrecht

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