A constant-temperature method for evaluating deep-level parameters in Schottky-barrier TSC measurements

1975 ◽  
Vol 8 (3) ◽  
pp. 254-261 ◽  
Author(s):  
B L Smith ◽  
M A Carter
Keyword(s):  
Schottky Barrier ◽  
Constant Temperature ◽  
Deep Level ◽  
Temperature Method

scholarly journals Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 848
Author(s):  
Ki-Sik Im ◽  
Jae-Hoon Lee ◽  
Yeo Jin Choi ◽  
Sung Jin An
Keyword(s):  
Buffer Layer ◽  
Deep Level ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Noise Characteristics ◽  
Temperature Method ◽  
Gan Buffer Layer

We investigated the effects of GaN buffer resistance of AlGaN/GaN high-electron-mobility transistors (HEMTs) on direct current (DC), low-frequency noise (LFN), and pulsed I-V characterization performances. The devices with the highest GaN buffer resistance were grown on sapphire substrate using two-step growth temperature method without additional compensation doping. The proposed device exhibited the degraded off-state leakage current due to the improved GaN buffer quality compared to the reference devices with relative low buffer resistance, which is confirmed by high resolution X-ray diffraction (HRXRD). However, the proposed device with deep-level defects in GaN buffer layer showed the reduced hysteresis (∆Vth), increased breakdown voltage (BV), and enhanced pulse I-V characteristics. Regardless of GaN buffer resistance, all devices clearly showed 1/f behavior with carrier number fluctuations (CNF) at on-state but followed 1/f2 characteristic at off-state. From the 1/f2 noise characteristics, the extracted trap time constant (τi) of the proposed device can be obtained to be 10 ms, which is shorter than those of the reference devices because of the full compensation of deep-level defects in the GaN buffer layer.

The Study of Oxidative Stability of Castor Oil Based Biodiesel

2013 ◽  
Vol 724-725 ◽  
pp. 334-337 ◽  
Author(s):  
Yun Feng Yang ◽  
Guo Sheng Hu ◽  
Yin Jie Chen
Keyword(s):  
Differential Scanning Calorimetry ◽  
Oxidative Stability ◽  
Constant Temperature ◽  
Castor Oil ◽  
Acid Value ◽  
Scanning Calorimetry ◽  
Accelerated Oxidation ◽  
Temperature Method ◽  
Pressure Differential Scanning Calorimetry ◽  
Activity Energy

The oxidative stability of castor oil based biodiesel, added different antioxidant, was studied systematacially through pressure differential scanning calorimetry (PDSC), accelerated oxidation test, constant temperature method, programmed temperature method. The result shows after adding antioxidant in castor oil, the generation of hyperoxide and acid value were suffocated for the biodiesel. When the content of antioxidant 300 was 0.6 wt.%, the initiation oxide temperature raised to 197.7°C, the acid value reduced to 1.41, the solubility of oxide reduced to 1.40mg/100mL, and the activity energy of oxidation was 48.18kJ/mol.

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

2013 ◽  
Vol 534 ◽  
pp. 603-608 ◽  
Author(s):  
Koteswara Rao Peta ◽  
Byung-Guon Park ◽  
Sang-Tae Lee ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Schottky Barrier Diode

scholarly journals Electrical Defect State Distribution in Single Crystal ZnO Schottky Barrier Diodes

Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 206
Author(s):  
Jinhee Park ◽  
You Seung Rim ◽  
Pradeep Senanayake ◽  
Jiechen Wu ◽  
Dwight Streit
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Schottky Barrier ◽  
Deep Level ◽  
Depletion Region ◽  
Intrinsic Defect ◽  
Defect State ◽  
Schottky Barrier Diodes ◽  
Defect States ◽  
State Distribution

The characterization of defect states in a hydrothermally grown single crystal of ZnO was performed using deep-level transient spectroscopy in the temperature range of 77–340 K. The native intrinsic defect energy level within the ZnO band gap occurred in the depletion region of ZnO Schottky barrier diodes. A major defect level was observed, with a thermal activation energy of 0.27 eV (E3) within the defect state distribution from 0.1 to 0.57 eV below the conduction band minimum. We confirmed the maximum defect concentration to be 3.66 × 1016 cm−3 at 0.27 eV (E3). As a result, we clearly confirmed the distribution of density of defect states in the ZnO band gap.

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