Group III nitride semiconductors for short wavelength light-emitting devices

1998 ◽  
Vol 61 (1) ◽  
pp. 1-75 ◽  
Author(s):  
J W Orton ◽  
C T Foxon
Keyword(s):  
Short Wavelength ◽  
Nitride Semiconductors ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Short Wavelength Light ◽  
Group Iii Nitride ◽  
Wavelength Light

Group III nitride-based UV light emitting devices

2003 ◽  
Vol 195 (3) ◽  
pp. 491-495 ◽  
Author(s):  
H. Amano ◽  
S. Takanami ◽  
M. Iwaya ◽  
S. Kamiyama ◽  
I. Akasaki
Keyword(s):  
Uv Light ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Group Iii Nitride

A Simple Reliable Method of Selecting Epoxy Molding Compounds for High Power Short Wavelength Light Emitting Diode Packages

2006 ◽  
Vol 510-511 ◽  
pp. 154-157
Author(s):  
Chong Mu Lee ◽  
Seung Mo Kang ◽  
Keun Bin Yim ◽  
Sook Joo Kim ◽  
Hyoun Woo Kim
Keyword(s):  
High Power ◽  
Short Wavelength ◽  
Reliable Method ◽  
Light Emitting Diode ◽  
Thermal Stabilities ◽  
Light Emitting ◽  
Molding Compounds ◽  
Weight Losses ◽  
Short Wavelength Light ◽  
Wavelength Light

Epoxy molding compounds (EMC) with higher thermal stabilities are urgently needed as the light emitting diode (LED) becomes brighter and the wavelength of the its light becomes shorter. This paper proposes a simple reliable method of evaluating the thermal stabilities of commercial EMCs. The transmittances of most commercial EMC samples for high power short wavelength LED packages were decreased by heat treatment at 150oC for 200hr. Also the thermal stabilities of the samples were confirmed by measuring the weight losses through TGA. The experimental results suggest that employing a good heatsink is indispensable in highly bright short wavelength LED packages.

The Evolution of Nitride Semiconductors

1997 ◽  
Vol 482 ◽  
Author(s):  
I. Akasaki
Keyword(s):  
Group Iii Nitrides ◽  
Research Society ◽  
Current Status ◽  
Nitride Semiconductors ◽  
Light Emitting ◽  
Group Iii ◽  
Commercial Success ◽  
Materials Research ◽  
Fundamental Research ◽  
Group Iii Nitride

AbstractThe great scientific and commercial success of the group-III nitrides in recent years is the result of persistent fundamental research over a time span of three decades. In the late 60's and in the early 70's the very heart of gallium nitride research was located in J.I. Pankove's laboratory at RCA. There the first single crystalline GaN was grown by Maruska and Tietjen and the very first GaN light emitting diodes were produced by Pankove in September 1971, 26 years ago. Since then the community of nitride research has come a long and troublesome way, but it has succeeded. This 1997 Fall Meeting Symposium on Nitride Semiconductors of the Materials Research Society is dedicated to Professor J.I. Pankove for his outstanding and groundbreaking contributions in the early development of group-III nitride research. This paper reports a historical summary of the evolution of the field summarizing the landmark contributions that have led to the current status of success.

Sign in / Sign up

Export Citation Format

Share Document