The Evolution of Nitride Semiconductors

1997 ◽  
Vol 482 ◽  
Author(s):  
I. Akasaki
Keyword(s):  
Group Iii Nitrides ◽  
Research Society ◽  
Current Status ◽  
Nitride Semiconductors ◽  
Light Emitting ◽  
Group Iii ◽  
Commercial Success ◽  
Materials Research ◽  
Fundamental Research ◽  
Group Iii Nitride

AbstractThe great scientific and commercial success of the group-III nitrides in recent years is the result of persistent fundamental research over a time span of three decades. In the late 60's and in the early 70's the very heart of gallium nitride research was located in J.I. Pankove's laboratory at RCA. There the first single crystalline GaN was grown by Maruska and Tietjen and the very first GaN light emitting diodes were produced by Pankove in September 1971, 26 years ago. Since then the community of nitride research has come a long and troublesome way, but it has succeeded. This 1997 Fall Meeting Symposium on Nitride Semiconductors of the Materials Research Society is dedicated to Professor J.I. Pankove for his outstanding and groundbreaking contributions in the early development of group-III nitride research. This paper reports a historical summary of the evolution of the field summarizing the landmark contributions that have led to the current status of success.

scholarly journals Chlorine-Based Plasma Etching of GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
R. J. Shul ◽  
R. D. Briggs ◽  
S. J. Pearton ◽  
C. B. Vartuli ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Wide Band ◽  
Group Iii Nitrides ◽  
Wide Band Gap ◽  
Light Emitting ◽  
Group Iii ◽  
Inductively Coupled ◽  
Group Iii Nitride

ABSTRACTThe wide band gap group-III nitride materials continue to generate interest in the semiconductor community with the fabrication of green, blue, and ultraviolet light emitting diodes (LEDs), blue lasers, and high temperature transistors. Realization of more advanced devices requires pattern transfer processes which are well controlled, smooth, highly anisotropic and have etch rates exceeding 0.5 μm/min. The utilization of high-density chlorine-based plasmas including electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) systems has resulted in improved etch quality of the group-III nitrides over more conventional reactive ion etch (RIE) systems.

scholarly journals Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

2017 ◽  
Author(s):  
Kai Ding ◽  
Vitaliy Avrutin ◽  
Ümit Özgür ◽  
Hadis Morkoç
Keyword(s):  
Light Emitting Diodes ◽  
Molar Fraction ◽  
Epitaxial Lateral Overgrowth ◽  
Current Status ◽  
Organic Chemical ◽  
Bulk Single Crystal ◽  
Light Emitting ◽  
Group Iii ◽  
Deep Ultraviolet ◽  
Group Iii Nitride

We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice- and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p- and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors

2020 ◽  
Vol 59 (2) ◽  
pp. 020501
Author(s):  
Shigefusa F. Chichibu ◽  
Yoichi Ishikawa ◽  
Kouji Hazu ◽  
Kentaro Furusawa
Keyword(s):  
Wide Bandgap ◽  
Nitride Semiconductors ◽  
Time Resolved ◽  
Group Iii ◽  
Group Iii Nitride

Heteroepitaxy of GaN on Silicon: In Situ Measurements

2005 ◽  
Vol 483-485 ◽  
pp. 1051-1056
Author(s):  
A. Krost ◽  
Armin Dadgar ◽  
F. Schulze ◽  
R. Clos ◽  
K. Haberland ◽  
...  
Keyword(s):  
Low Cost ◽  
Group Iii Nitrides ◽  
In Situ Monitoring ◽  
Attractive Alternative ◽  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices ◽  
Thermal Expansion Coefficients ◽  
Long Time

Due to the lack of GaN wafers, so far, group-III nitrides are mostly grown on sapphire or SiC substrates. Silicon offers an attractive alternative because of its low cost, large wafer area, and physical benefits such as the possibility of chemical etching, lower hardness, good thermal conductivity, and electrical conducting or isolating for light emitting devices or transistor structures, respectively. However, for a long time, a technological breakthrough of GaN-on-silicon has been thought to be impossible because of the cracking problem originating in the huge difference of the thermal expansion coefficients between GaN and silicon which leads to tensile strain and cracking of the layers when cooling down. However, in recent years, several approaches to prevent cracking and wafer bowing have been successfully applied. Nowadays, device-relevant thicknesses of crackfree group-III-nitrides can be grown on silicon. To reach this goal the most important issues were the identification of the physical origin of strains and its engineering by means of in situ monitoring during metalorganic vapor phase epitaxy.

Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys

2003 ◽  
Vol 798 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
E. E. Haller ◽  
...  
Keyword(s):  
Pressure Dependence ◽  
Pressure Coefficient ◽  
Accurate Method ◽  
Group Iii Nitrides ◽  
Localized States ◽  
Optical Transitions ◽  
Group Iii ◽  
Pressure Coefficients ◽  
Nitride Alloys ◽  
Group Iii Nitride

ABSTRACTThe hydrostatic pressure dependence of the optical transitions in InN, In-rich In1-xGaxN (0 < x < 0.5) and In1-xAlxN (x = 0.25) alloys is studied using diamond anvil cells. The absorption edges and the photoluminescence peaks shift to higher energy with pressure. The pressure coefficient of InN is determined to be 3.0±0.1 meV/kbar. Together with previous experimental results, our data suggest that the pressure coefficients of group-III nitride alloys have only a weak dependence on the alloy composition. Photoluminescence gives much smaller pressure coefficients, which is attributed to emission involving highly localized states. This indicates that photoluminescence might not be an accurate method to study the pressure dependence of the fundamental bandgaps of group III-nitrides.

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