Analytical method for the measurement of the electrostatic force and the contact potential difference excluding the effect of the Casimir force with a conventional atomic force microscope

2019 ◽  
Vol 58 (SI) ◽  
pp. SIIA08
Author(s):  
Naoki Yoshida ◽  
Kazuhisa Sueoka
Keyword(s):  
Atomic Force Microscope ◽  
Analytical Method ◽  
Casimir Force ◽  
Electrostatic Force ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Contact Potential ◽  
Atomic Force

Changes of Contact Potential Difference Induced by Frictional Damage in Ultrahigh Vacuum

1999 ◽  
Vol 558 ◽  
Author(s):  
L. Zhang ◽  
K. Nakayama
Keyword(s):  
Atomic Force Microscope ◽  
Work Function ◽  
Contact Potential Difference ◽  
Ultrahigh Vacuum ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Light Load ◽  
Atomic Force ◽  
The Difference

ABSTRACTThe work function is one of the most fundamental properties of a metal surface. To clarify frictional electrification phenomena, the effects of frictional damage on the contact potential difference (CPD), which is defined by the difference between the work functions of two contacting surfaces, were investigated. Au(111) and Si(111) surfaces were scratched in an ultrahigh vacuum under a light load with the Si cantilever tip of an atomic force microscope. The contact potential difference between the scratched surface and the tip whose work function was known was measured using an ultrahigh vacuum scanning Kelvin probe force microscope (SKPM). Simultaneously, the noncontact atomic force microscope (NC-AFM) images were observed in situ. The CPD images showed clear changes between the areas with and without scratching, corresponding to the scratching track on the NC-AFM images.

scholarly journals Electron work function in individual multi-walled carbon nanotubes doped with nitrogen and boron

2020 ◽  
pp. 87-92
Author(s):  
N. A. Davletkildeev ◽  
◽  
D. V. Sokolov ◽  
E. Yu. Mosur ◽  
I. A. Lobov ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electrostatic Force ◽  
Contact Potential Difference ◽  
Electron Work Function ◽  
Chemical Vapor ◽  
Potential Difference ◽  
Contact Potential ◽  
Force Microscopy ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

Multi-walled undoped and doped with nitrogen and boron carbon nanotubes have been synthesized by chemical vapor deposition. Based on the analysis of images obtained by electrostatic force microscopy at various tip voltage, the value of the external contact potential difference between the tip and individual carbon nanotubes is determined. Using the obtained value of the contact potential difference, the electron work functions for undoped and doped with nitrogen and boron individual carbon nanotubes are calculated, which amounted to 4,7; 4,6 end 5,75 eV, respectively

scholarly journals Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Structural Changes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Carrier Lifetimes ◽  
Transmission Electron ◽  
Effective Carrier

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

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