Photoluminescence and X-Ray Photoelectron Spectroscopy of p-Type Phosphorus-Doped ZnO Films Prepared by MOCVD

The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p–P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating PO. This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.

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Local electronic structure of phosphorus-doped ZnO films investigated by X-ray absorption near-edge spectroscopy

Applied Physics A ◽

10.1007/s00339-008-4883-6 ◽

2008 ◽

Vol 94 (4) ◽

pp. 995-998 ◽

Cited By ~ 15

Author(s):

V. Vaithianathan ◽

K. Asokan ◽

Jae Young Park ◽

Sang Sub Kim

Keyword(s):

Electronic Structure ◽

Zno Films ◽

X Ray ◽

Local Electronic Structure ◽

Doped Zno ◽

Phosphorus Doped ◽

X Ray Absorption

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Effect of Annealing Temperature on the Optical and Structural Properties of Ge Doped ZnO Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.304.79 ◽

2011 ◽

Vol 304 ◽

pp. 79-83

Author(s):

Dong Hua Fan ◽

Kai Zhen Huang ◽

Yu Bao Huang

Keyword(s):

Structural Properties ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Free Exciton ◽

Ultra Violet ◽

Zno Films ◽

Violet Emission ◽

X Ray ◽

High Annealing ◽

Doped Zno

Ge doped ZnO films were synthesized on silicon substrate via RF magnetron co-sputtering methods. The effects of annealing temperature on the optical and structural properties of the Ge doped ZnO films were investigated by means of photoluminescence spectra, X-ray diffraction, and X-ray Photoelectron Spectroscopy. The ultra-violet emission should be related with the free-exciton recombination, and blue and yellow emissions should be attributed to the defect state caused by Ge. The varieties of annealing temperature affect greatly the optical properties. The high annealing temperature leads to the oxidation of Ge and the formation of Zn2GeO4, which could lead to the change of PL spectra.

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Effect of N and P codoping on ZnO properties

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.645.64 ◽

2013 ◽

Vol 645 ◽

pp. 64-67 ◽

Cited By ~ 2

Author(s):

Jin Zhong Wang ◽

Elangovan Elamurugu ◽

Hong Tao Li ◽

Shu Jie Jiao ◽

Lian Cheng Zhao ◽

...

Keyword(s):

Photoelectron Spectroscopy ◽

Atomic Ratio ◽

Zno Films ◽

X Ray Diffraction ◽

Nitrogen And Phosphorus ◽

X Ray ◽

Co Doping ◽

Glass Substrates ◽

Doped Zno ◽

Co Doped

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films.

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Effects of magnesium on phosphorus chemical states and p-type conduction behavior of phosphorus-doped ZnO films

The Journal of Chemical Physics ◽

10.1063/1.4775840 ◽

2013 ◽

Vol 138 (3) ◽

pp. 034704 ◽

Cited By ~ 3

Author(s):

Jichao Li ◽

Yongfeng Li ◽

Bin Yao ◽

Ying Xu ◽

Shiwang Long ◽

...

Keyword(s):

Zno Films ◽

Conduction Behavior ◽

Chemical States ◽

Doped Zno ◽

P Type ◽

Phosphorus Doped ◽

Type Conduction

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Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

APL Materials ◽

10.1063/1.4863595 ◽

2014 ◽

Vol 2 (1) ◽

pp. 012112 ◽

Cited By ~ 19

Author(s):

M. Gabás ◽

P. Torelli ◽

N. T. Barrett ◽

M. Sacchi ◽

José R. Ramos Barrado

Keyword(s):

Electronic Structure ◽

Photoelectron Spectroscopy ◽

Zno Films ◽

X Ray ◽

Doped Zno

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Microstructure and electrical properties of p-type phosphorus-doped ZnO films

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/41/2/025103 ◽

2007 ◽

Vol 41 (2) ◽

pp. 025103 ◽

Cited By ~ 19

Author(s):

A Allenic ◽

W Guo ◽

Y B Chen ◽

Y Che ◽

Z D Hu ◽

...

Keyword(s):

Electrical Properties ◽

Zno Films ◽

Doped Zno ◽

P Type ◽

Phosphorus Doped

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p-TYPE NITROGEN-DOPED ZnO MICRORODS PREPARATION BY SPRAY PYROLYSIS

Surface Review and Letters ◽

10.1142/s0218625x12500515 ◽

2012 ◽

Vol 19 (05) ◽

pp. 1250051 ◽

Cited By ~ 3

Author(s):

F. ZAHEDI ◽

R. S. DARIANI ◽

S. M. ROZATI

Keyword(s):

Spray Pyrolysis ◽

Photoelectron Spectroscopy ◽

Spray Pyrolysis Technique ◽

Atomic Ratio ◽

Zno Films ◽

Ultraviolet Emission ◽

Nitrogen Doped ◽

Conductivity Type ◽

Doped Zno ◽

P Type

Nitrogen doped ZnO films with different N/Zn atomic ratio have been prepared by spray pyrolysis technique on glass substrate at 500°C. N/Zn atomic ratio has been selected 0, 0.5, 1, 2 and 3. The effect of N/Zn ratio on structural, optical and electrical properties has been investigated. Hall effect measurement studies show that the conductivity type of the films is affected by N/Zn ratio. The conductivity type of films changes from n for N/Zn = 0 and 0.5 to p for N/Zn = 1 and 2. Further increasing in N/Zn to 3 again led to n-type conductivity. p-type ZnO:N microrods film prepared with N/Zn = 1 has highest carrier concentration (1.36 × 1016 cm-3) and lowest resistivity (628 Ω.cm). All films are polycrystalline with hexagonal wurtzite structure. (002) plane is preferential orientation for all films. Surface morphology changes from rods to grains by increasing in N/Zn ratio. Optical transmission of the films increases with increasing in N/Zn ratio. Photoluminescence spectra at room temperature show the ultraviolet emission and two visible emissions at 440 nm and 520 nm. X-ray photoelectron spectroscopy analysis confirms the incorporation of nitrogen in ZnO:N film with N/Zn = 1 .

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