Local electronic structure of phosphorus-doped ZnO films investigated by X-ray absorption near-edge spectroscopy

2008 ◽  
Vol 94 (4) ◽  
pp. 995-998 ◽  
Author(s):  
V. Vaithianathan ◽  
K. Asokan ◽  
Jae Young Park ◽  
Sang Sub Kim
2006 ◽  
Vol 6 (11) ◽  
pp. 3422-3425
Author(s):  
Veeramuthu Vaithianathan ◽  
Jong Ha Moon ◽  
Chang-Hwan Chang ◽  
Kandasami Asokan ◽  
Sang Sub Kim

The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p–P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating PO. This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.


2017 ◽  
Vol 710 ◽  
pp. 843-849 ◽  
Author(s):  
Turghunjan Gholam ◽  
Abduleziz Ablat ◽  
Mamatrishat Mamat ◽  
Rong Wu ◽  
Aimierding Aimidula ◽  
...  

1996 ◽  
Vol 53 (3) ◽  
pp. 1119-1128 ◽  
Author(s):  
K. L/awniczak-Jabl/onska ◽  
R. J. Iwanowski ◽  
Z. Gol/acki ◽  
A. Traverse ◽  
S. Pizzini ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document