Effect of N and P codoping on ZnO properties

2013 ◽  
Vol 645 ◽  
pp. 64-67 ◽  
Author(s):  
Jin Zhong Wang ◽  
Elangovan Elamurugu ◽  
Hong Tao Li ◽  
Shu Jie Jiao ◽  
Lian Cheng Zhao ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Nitrogen And Phosphorus ◽  
X Ray ◽  
Co Doping ◽  
Glass Substrates ◽  
Doped Zno ◽  
Co Doped

Nitrogen and Phosphorus co-doped (N+P)- zinc oxide (ZnO) films were RF sputtered on corning glass substrates at 350 °C and comparatively studied with undoped, N-, and P- doped ZnO. X-ray diffraction spectra confirmed that the ZnO structure with a preferred orientation along direction. Scanning electron microscope analysis showed different microstructure for the N+P co-doping, and thus probably confirming the co-existence of both the dopants. X-ray photoelectron spectroscopy spectra revealed that the chemical composition in N+P co-doped ZnO are different from that found in undoped, N-, and P- doped ZnO. The atomic ratio of N and P in N+P co-doped ZnO is higher than that in single N or P doped ZnO. One broad ZnO emission peak around 420 nm is observed in photoluminescence spectra. The relative intensity of the strongest peak obtained from co-doped ZnO films is about twice than the P- doped and thrice than the pure and N- doped films.

scholarly journals Physical Investigations of (Co, Mn) Co-Doped ZnO Nanocrystalline Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1507
Author(s):  
Bechir Yahmadi ◽  
Olfa Kamoun ◽  
Badriyah Alhalaili ◽  
Safia Alleg ◽  
Ruxandra Vidu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Magnetic Measurements ◽  
Texture Coefficient ◽  
Room Temperature Ferromagnetism ◽  
Band Gap Energy ◽  
X Ray ◽  
Co Doping ◽  
Glass Substrates ◽  
Doped Zno ◽  
Co Doped

Undoped as well as (Co, Mn) co-doped Zinc oxides have been effectively developed on glass substrates, taking advantage of the spray pyrolysis procedure. The X-ray diffraction XRD as well as X-ray photoelectron spectroscopy (XPS) measurements have recognized a pure hexagonal wurtzite form of ZnO, and no other collateral phases such as MnO2 or CoO2 have been observed as a result of doping. The calculated values of the texture coefficient (TC) were between 0.15 and 5.14, indicating a dominant orientation along the (002) plane. The crystallite size (D) varies with the (Co, Mn) contents. The dislocation density (δ) as well as the residual microstrains increased after Co and Mn doping. Furthermore, the surface morphology of the films has been affected significantly by the Co and Mn incorporation, as shown by the scanning electron microscopy (SEM) investigation. The study of the optical properties exhibits a red shift of the band gap energy (Eg) with the (Co, Mn) co-doping. The magnetic measurements have shown that the undoped and (Co, Mn) co-doped ZnO thin films displayed room-temperature ferromagnetism (RTFM).

Effects of Annealing on Properties of (Na,Mg):ZnO Thin Films Deposited by Sol-Gel Method

2014 ◽  
Vol 898 ◽  
pp. 33-36 ◽  
Author(s):  
Cai Zhen Zhang ◽  
Yong Gang Chen ◽  
Su Liu
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Coating Method ◽  
Method Effects ◽  
Structural Surface ◽  
Co Doped

Na/Mg co-doped (Na,Mg):ZnO films were fabricated on pyrex glass substrates by sol-gel spin-coating method. Effects of annealing on properties of the films were particularly investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmittance spectra. The internal stress of the films annealed at different temperature was calculated. Experimental and analytical results show that some NaCl freeze-out derivatives will appear on films when the annealing temperature is too low, with the increasing annealing temperature, the c-axis tensile stress is sharply decreased first, then the c-axis stress was changed into press stress and its value is increased continuously, so the structural, surface and the optical properties of the films improve first and deteriorate afterwards.

scholarly journals Effect of the Incorporation of Titanium on the Optical Properties of ZnO Thin Films: From Doping to Mixed Oxide Formation

Coatings ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 180 ◽  
Author(s):  
Miriam Yuste ◽  
Ramon Escobar-Galindo ◽  
Noelia Benito ◽  
Carlos Palacio ◽  
Oscar Martínez ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Mixed Oxides ◽  
Energy Gap ◽  
Amorphous Structure ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Wide Range ◽  
Ti Content

ZnO films with Ti atoms incorporated (TZO) in a wide range (0–18 at.%) have been grown by reactive co-sputtering on silicon and glass substrates. The influence of the titanium incorporation in the ZnO matrix on the structural and optical characteristics of the samples has been determined by Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The results indicate that the samples with low Ti content (<4 at.%) exhibit a wurtzite-like structure, with the Ti4+ ions substitutionally incorporated into the ZnO structure, forming Ti-doped ZnO films. In particular, a very low concentration of Ti (<0.9 at.%) leads to a significant increase of the crystallinity of the TZO samples. Higher Ti contents give rise to a progressive amorphization of the wurtzite-like structure, so samples with high Ti content (≥18 at.%) display an amorphous structure, indicating in the XPS analysis, a predominance of Ti–O–Zn mixed oxides. The energy gap obtained from absorption spectrophotometry increases from 3.2 eV for pure ZnO films to 3.6 eV for those with the highest Ti content. Ti incorporation in the ZnO samples <0.9 at.% raises both the blue (380 nm) and green (approx. 550 nm) bands of the photoluminescence (PL) emission, thereby indicating a significant improvement of the PL efficiency of the samples.

STRUCTURE AND MAGNETIC PROPERTIES OF Co-DOPED SnO2 NANOWIRES

2011 ◽  
Vol 10 (04n05) ◽  
pp. 967-971 ◽  
Author(s):  
U. K. GOUTAM ◽  
SHASHWATI SEN ◽  
JAGANNATH ◽  
A. K. SINGH ◽  
R. MUKUND ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Magnetic Measurements ◽  
Ferromagnetic Behavior ◽  
Tubular Furnace ◽  
X Ray Diffraction ◽  
X Ray ◽  
Co Doping ◽  
Sno2 Nanowires ◽  
Tin Metal ◽  
Co Doped

Co -doped SnO2 nanowires were grown by thermal evaporation of a mixture of Tin metal powder and CoCl2 · 6H2O in a tubular furnace. The growth occurs by vapor–solid growth mechanism. Nanowires grew along the sidewall of the alumina boat placed in the tubular furnace and the diameter of these nanowires (as was evident from scanning electron microscopy), was found to be in the range of 50 nm to 200 nm. Co was successfully doped in SnO2 lattice as revealed by X-ray diffraction data and was found to be in Co2+ state in the nanowires as detected by X-ray Photoelectron Spectroscopy measurements. Room temperature magnetic measurements, carried out using Vibrating Sample Magnetometer, indicated ferromagnetic behavior of the nanowires indicating their potential for spintronics applications. With increasing Co doping (upto 1%), the lattice parameters of SnO2 decreased and the saturation magnetization increased, suggesting a strong structure-magnetic property relationship.

Positron Beam Study of Co Doped ZnO Films Prepared by PLD

2008 ◽  
Vol 607 ◽  
pp. 102-104 ◽  
Author(s):  
Hong Feng Ren ◽  
Hui Min Weng ◽  
Bang Jiao Ye ◽  
Rong Dian Han ◽  
Hui Li ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Effective Diffusion ◽  
Positron Beam ◽  
Zno Films ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
Slow Positron ◽  
X Ray ◽  
Doped Zno ◽  
Co Doped

Slow positron beam are used to study defect structures in Co doped and undoped ZnO films prepared by Pulsed Laser Deposition (PLD) at 400°C, 600°C, 700°C on c-plane sapphire. Comparing with ZnO samples, Co doped ZnO samples have larger positron effective diffusion length (Leff), which change in different tendencies depending on the growth temperature. Crystal structures of the samples are investigated by X-ray diffraction (XRD) and wurtzite ZnO could be observed in Co doped samples.

scholarly journals Formation of ZnO films using the SILAR method

Chemija ◽  
2019 ◽  
Vol 30 (2) ◽  
Author(s):  
Birutė Šimkūnaitė-Stanynienė ◽  
Giedrė Grincienė ◽  
Leonas Naruškevičius ◽  
Loreta Tamašauskaitė-Tamašiūnaitė ◽  
Algirdas Selskis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Precursor Solution ◽  
Band Gap Energy ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Glass Substrates ◽  
Layer Adsorption

The thin ZnO films were deposited using the successive ionic layer adsorption and reaction (SILAR) method. The morphology, structure and composition of the thin ZnO films were examined using scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The optical properties of the thin ZnO layers, which were deposited onto glass substrates, were investigated using ultraviolet–visible spectrophotometry (UV/Vis). It was found that the optical properties of the ZnO films depend on the composition of anionic precursor solutions, which were used for deposition of the ZnO layers. Moreover, the highest band gap energy of 3.86 eV was obtained for the ZnO layer when the 0.026 mol l–1 Na2B4O7 + 0.002 mol l–1 KMnO4 solution was used as the anionic precursor solution for the deposition of ZnO layers.

Co-Doped ZnO Transparent Conductive Films for LCD and UV Detectors

2012 ◽  
Vol 500 ◽  
pp. 226-230 ◽  
Author(s):  
Yu Zhen Yuan ◽  
Hui Wang
Keyword(s):  
Liquid Crystal Display ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Uv Detectors ◽  
Transparent Conductive Films ◽  
Glass Substrates ◽  
Conductive Films ◽  
Photoconductive Detectors ◽  
Doped Zno ◽  
Co Doped

Zr,Ga co-doped ZnO transparent conductive films were deposited on glass substrates by DC magnetron sputtering at room temperature.The influence of sputtering pressure on the structural,electrical,and optical properties of Zr,Ga co-doped ZnO films was investigated by X-ray diffraction,scanning electron microscopy (SEM),digital four-point probe,and optical transmission spectroscopy.The lowest resistivity of the Zr,Ga co-doped ZnO film is 3.01×10-4Ω﹒cm.All the films present a high transmittance of above 91% in the visible range.These results make the possibility for liquid crystal display (LCD) and UV photoconductive detectors.

Investigation of Aluminum Content on the Properties of Sol-Gel-Derived Zinc Oxide Thin Films

2007 ◽  
Vol 561-565 ◽  
pp. 1173-1176
Author(s):  
Shu Wen Xue ◽  
Xiao Tao Zu
Keyword(s):  
Sol Gel ◽  
Optical Transmittance ◽  
Atomic Ratio ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Al Content ◽  
Glass Substrates ◽  
Wide Range ◽  
Sol Gel Process

This paper reports that ZnO:Al films were deposited onto glass substrates by sol-gel process. Al/Zn atomic ratio varied in a wide range from 0 ~ 20%. The structural and optical properties were investigated by X-ray diffraction (XRD) and optical transmittance, respectively. X-ray photoemission spectroscopy (XPS) was used to investigate the elemental compositions. XRD results showed that ZnO films remained c-axis-orientated when Al/Zn atomic ratio was below 20% and the grain size decreased with increasing Al content. The optical transmittance showed that the optical bandgap of ZnO films blueshifted with increasing Al/Zn atomic ratio from 0-20%. XPS measurements showed that the binding energy of O1s increased with increasing Al content.

The Effect of Sputtering Power on the Properties of Zr-Ga Co-Doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 680 ◽  
pp. 75-80
Author(s):  
Xiao Li Wu ◽  
Hui Wang ◽  
Yu Zhen Yuan
Keyword(s):  
Magnetron Sputtering ◽  
Visible Range ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Conductive Films ◽  
Sputtering Power ◽  
Doped Zno ◽  
Co Doped

Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV).

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