Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

2018 ◽  
Vol 35 (4) ◽  
pp. 047302
Author(s):  
Lei Zhu ◽  
Yong-Wei Chang ◽  
Nan Gao ◽  
Xin Su ◽  
YeMin Dong ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Frequency Properties

scholarly journals Nanoscale nonlinear radio frequency properties of bulk Nb: Origins of extrinsic nonlinear effects

2015 ◽  
Vol 92 (13) ◽  
Author(s):  
Tamin Tai ◽  
B. G. Ghamsari ◽  
T. Bieler ◽  
Steven M. Anlage
Keyword(s):  
Radio Frequency ◽  
Nonlinear Effects ◽  
Frequency Properties

Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect

2008 ◽  
Vol 47 (4) ◽  
pp. 2087-2091 ◽  
Author(s):  
Sheng-Chun Wang ◽  
Pin Su ◽  
Kun-Ming Chen ◽  
Chien-Ting Lin ◽  
Victor Liang ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Body Effect

scholarly journals 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sinan Bugu ◽  
Shimpei Nishiyama ◽  
Kimihiko Kato ◽  
Yongxun Liu ◽  
Shigenori Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Radio Frequency ◽  
Liquid Helium ◽  
Signal To Noise Ratio ◽  
Matching Condition ◽  
Silicon On Insulator ◽  
Signal To Noise ◽  
Silicon Quantum Dot ◽  
Optimal Signal

AbstractWe demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

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