Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect

2008 ◽  
Vol 47 (4) ◽  
pp. 2087-2091 ◽  
Author(s):  
Sheng-Chun Wang ◽  
Pin Su ◽  
Kun-Ming Chen ◽  
Chien-Ting Lin ◽  
Victor Liang ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Body Effect

Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates

2018 ◽  
Vol 35 (4) ◽  
pp. 047302
Author(s):  
Lei Zhu ◽  
Yong-Wei Chang ◽  
Nan Gao ◽  
Xin Su ◽  
YeMin Dong ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Frequency Properties

scholarly journals 4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sinan Bugu ◽  
Shimpei Nishiyama ◽  
Kimihiko Kato ◽  
Yongxun Liu ◽  
Shigenori Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Radio Frequency ◽  
Liquid Helium ◽  
Signal To Noise Ratio ◽  
Matching Condition ◽  
Silicon On Insulator ◽  
Signal To Noise ◽  
Silicon Quantum Dot ◽  
Optimal Signal

AbstractWe demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

scholarly journals Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K

Nano Letters ◽  
2008 ◽  
Vol 8 (12) ◽  
pp. 4648-4652 ◽  
Author(s):  
M. Manoharan ◽  
Yoshishige Tsuchiya ◽  
Shunri Oda ◽  
Hiroshi Mizuta
Keyword(s):  
Radio Frequency ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Electron Transistors

scholarly journals Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Raisei Mizokuchi ◽  
Sinan Bugu ◽  
Masaru Hirayama ◽  
Jun Yoneda ◽  
Tetsuo Kodera
Keyword(s):  
Quantum Dots ◽  
Radio Frequency ◽  
Impedance Matching ◽  
Electrical Circuit ◽  
Phase Response ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Large Phase ◽  
Electron Transistors

AbstractRadio-frequency reflectometry techniques are instrumental for spin qubit readout in semiconductor quantum dots. However, a large phase response is difficult to achieve in practice. In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. We study quantum dots which do not have the top gate structure considered to hinder radio frequency reflectometry measurements using physically defined quantum dots. Based on the model which properly takes into account the parasitic components, we precisely determine the gate-dependent device admittance. Clear Coulomb peaks are observed in the amplitude and the phase of the reflection coefficient, with a remarkably large phase signal of ∼45°. Electrical circuit analysis indicates that it can be attributed to a good impedance matching and a detuning from the resonance frequency. We anticipate that our results will be useful in designing and simulating reflectometry circuits to optimize qubit readout sensitivity and speed.

scholarly journals Gate Oxide Thickness Influence on the Gate Induced Floating Body Effect in SOI Technology

2008 ◽  
Vol 3 (2) ◽  
pp. 91-95
Author(s):  
Paula G. D. Agopian ◽  
João Antonio Martino ◽  
Eddy Simoen ◽  
Cor Claeys
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
Floating Body ◽  
Electrical Measurements ◽  
Body Effect ◽  
Soi Mosfet ◽  
Floating Body Effect ◽  
Gate Oxide Thickness ◽  
Soi Technology

In this work, we explore the gate oxide thickness influence on the Gate Induced Floating Body effect (GIFBE). This study was performed through two-dimensional numerical simulations and electrical measurements. The available devices are from 130nm and 65nm Silicon-On-Insulator (SOI) MOSFET technologies. The GIFBE and threshold voltage are evaluated as function of the gate oxide thickness reduction and an overlap tendency of the first and the second transconductance peaks is observed.

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