4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot
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AbstractWe demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.
2010 ◽
Vol 46
(4)
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pp. 518-524
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2017 ◽
Vol 121
(29)
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pp. 15957-15969
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2016 ◽
Vol 18
(37)
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pp. 25837-25851
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2018 ◽
Vol 287
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pp. 99-109
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