Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100).
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AbstractThe crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(100) is analysed by Raman scattering with variation of the penetration depth and besides bevel polishing or step etching. The region with considerable lattice imperfections is essentially confined to the original buffer layer.
2007 ◽
Vol 22
(7)
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pp. 736-741
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1997 ◽
Vol 173
(3-4)
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pp. 266-270
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1998 ◽
Vol 37
(Part 1, No. 4A)
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pp. 1709-1714
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2001 ◽
Vol 34
(13)
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pp. 1951-1954
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