Effects of Si3N4passivation on the dc and RF characteristics of metamorphic high-electron-mobility transistors depending on the gate-recess structures

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/2/025027 ◽

2009 ◽

Vol 24 (2) ◽

pp. 025027 ◽

Author(s):

J H Oh ◽

M Han ◽

Y H Baek ◽

S W Moon ◽

J K Rhee ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Applied Physics Express ◽

10.7567/apex.9.084102 ◽

2016 ◽

Vol 9 (8) ◽

pp. 084102 ◽

Author(s):

Zhili Zhang ◽

Shuangjiao Qin ◽

Kai Fu ◽

Guohao Yu ◽

Weiyi Li ◽

...

Keyword(s):

Ionic Liquid ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

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Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.478 ◽

2007 ◽

Vol 46 (2) ◽

pp. 478-484 ◽

Author(s):

Chih-Yuan Chan ◽

Ting-Chi Lee ◽

Shawn S. H. Hsu ◽

Leaf Chen ◽

Yu-Syuan Lin

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Applied Physics Express ◽

10.7567/apex.8.084101 ◽

2015 ◽

Vol 8 (8) ◽

pp. 084101 ◽

Author(s):

Po-Chun Yeh ◽

Yun-Wei Lin ◽

Yue-Lin Huang ◽

Jui-Hung Hung ◽

Bo-Ren Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Layer Deposition ◽

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Dual Gate-Recess Structure of Metamorphic High-Electron-Mobility Transistors for Enhancing f[sub max]

Journal of The Electrochemical Society ◽

10.1149/1.2992083 ◽

2008 ◽

Vol 155 (12) ◽

pp. H987 ◽

Author(s):

Jung-Hun Oh ◽

Min Han ◽

Sung-Woon Moon ◽

Seokhun Lee ◽

In-Seok Hwang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dual Gate ◽

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Characterization of Al 2 O 3 /GaN/AlGaN/GaN metal—insulator—semiconductor high electron mobility transistors with different gate recess depths

Chinese Physics B ◽

10.1088/1674-1056/20/2/027304 ◽

2011 ◽

Vol 20 (2) ◽

pp. 027304 ◽

Author(s):

Xiao-Hua Ma ◽

Cai-Yuan Pan ◽

Li-Yuan Yang ◽

Hui-You Yu ◽

Ling Yang ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Electron Mobility Transistors ◽

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Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.104302 ◽

2011 ◽

Vol 50 (10) ◽

pp. 104302

Author(s):

Akira Endoh ◽

Issei Watanabe ◽

Takashi Mimura ◽

Toshiaki Matsui

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

Monte Carlo Simulations ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.104302 ◽

2011 ◽

Vol 50 (10R) ◽

pp. 104302

Author(s):

Akira Endoh ◽

Issei Watanabe ◽

Takashi Mimura ◽

Toshiaki Matsui

Keyword(s):

Monte Carlo ◽

Electron Transport ◽

Monte Carlo Simulations ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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Very High Selective Etching of GaAs/Al0.2Ga0.8As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l800 ◽

2004 ◽

Vol 43 (No. 6B) ◽

pp. L800-L802 ◽

Author(s):

Chin-I Liao ◽

Po-Wen Sze ◽

Mau-Phon Houng ◽

Yeong-Her Wang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Selective Etching ◽

High Electron ◽

Buffer Solution ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Gate Recess ◽

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Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment

Applied Physics Express ◽

10.1143/apex.1.061101 ◽

2008 ◽

Vol 1 ◽

pp. 061101 ◽

Author(s):

Rongming Chu ◽

Christiane Poblenz ◽

Man Hoi Wong ◽

Sansaptak Dasgupta ◽

Siddharth Rajan ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Improved Performance ◽

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Investigations on In[sub 0.45]Al[sub 0.55]As∕In[sub x]Ga[sub 1−x]As Metamorphic High-Electron-Mobility Transistors with Double Gate-Recess and SiN[sub x] Passivation

Journal of The Electrochemical Society ◽

10.1149/1.3098480 ◽

2009 ◽

Vol 156 (5) ◽

pp. H367 ◽

Author(s):

Ching-Sung Lee ◽

Wei-Chou Hsu ◽

Chiu-Sheng Ho ◽

An-Yung Kao

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Double Gate ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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