Very High Selective Etching of GaAs/Al0.2Ga0.8As for Gate Recess Process to Pseudomorphic High Electron Mobility Transistors (PHEMT) Applications Using Citric Buffer Solution

2004 ◽  
Vol 43 (No. 6B) ◽  
pp. L800-L802 ◽  
Author(s):  
Chin-I Liao ◽  
Po-Wen Sze ◽  
Mau-Phon Houng ◽  
Yeong-Her Wang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Selective Etching ◽  
High Electron ◽  
Buffer Solution ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Recess ◽  
Very High

Impacts of Gate Recess and Passivation on AlGaN/GaN High Electron Mobility Transistors

2007 ◽  
Vol 46 (2) ◽  
pp. 478-484 ◽  
Author(s):  
Chih-Yuan Chan ◽  
Ting-Chi Lee ◽  
Shawn S. H. Hsu ◽  
Leaf Chen ◽  
Yu-Syuan Lin
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Recess

Dual Gate-Recess Structure of Metamorphic High-Electron-Mobility Transistors for Enhancing f[sub max]

2008 ◽  
Vol 155 (12) ◽  
pp. H987 ◽  
Author(s):  
Jung-Hun Oh ◽  
Min Han ◽  
Sung-Woon Moon ◽  
Seokhun Lee ◽  
In-Seok Hwang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Dual Gate ◽  
Gate Recess
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