Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit

2014 ◽  
Vol 29 (11) ◽  
pp. 115003 ◽  
Author(s):  
S L Rumyantsev ◽  
M E Levinshtein ◽  
T Saxena ◽  
M S Shur ◽  
L Cheng ◽  
...  
2015 ◽  
Vol 821-823 ◽  
pp. 893-896
Author(s):  
Sergey Rumyantsev ◽  
M. Levinshtein ◽  
T. Saxena ◽  
Michael Shur ◽  
Lin Cheng ◽  
...  

Optical switch-on of a very high voltage (18-kV class) 4H-SiC thyristor with an amplification step (pilot thyristor) to the current Imax = 1225A has been demonstrated using a purely inductive load. The results obtained show that a further switch-on current increase can only be achieved by introducing additional amplification steps in the pilot thyristor structure.


2014 ◽  
Vol 778-780 ◽  
pp. 1021-1024 ◽  
Author(s):  
Sergey Rumyantsev ◽  
Michael E. Levinshtein ◽  
Michael Shur ◽  
Lin Cheng ◽  
Anant K. Agarwal ◽  
...  

A 12 kV class 4H-SiC thyristor with a pilot thyristor (an amplification step) has been triggered to a current Imax = 1310 A in a mixed resistive-inductive load circuit. In order to further increase the Imax, the homogeneity of the initially turned-on region should be improved and/or additional amplification steps introduced


2009 ◽  
Vol 615-617 ◽  
pp. 749-752 ◽  
Author(s):  
Brett A. Hull ◽  
Charlotte Jonas ◽  
Sei Hyung Ryu ◽  
Mrinal K. Das ◽  
Michael J. O'Loughlin ◽  
...  

Large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m•cm2 (at VGS = 20 V) able to conduct 60 A at a power dissipation of 200 W/cm2 are presented. On-resistance is fairly stable with temperature, increasing from 11.5 m•cm2 (at VGS = 15 V) at 25°C to 14 m•cm2 at 150°C. The DMOSFETs exhibit avalanche breakdown at 1600 V with the gate shorted to the source, although sub-breakdown leakage currents up to 50 A are observed at 1200 V and 200°C due to the threshold voltage lowering with temperature. When switched with a clamped inductive load circuit from 65 A conducting to 750 V blocking, the turn-on and turn-off energies at 150°C were less than 4.5 mJ.


2018 ◽  
Vol 1 (2) ◽  
pp. p6
Author(s):  
Anahita Zargarani ◽  
S. Nima Mahmoodi

In this paper, a new method is proposed for improving a piezoelectric energy harvester’s output power. A piezoelectric vibration energy harvester has an inherent internal capacitance. The new approach adopts inductance to reduce the reactance of the internal capacitance and enhance the output power. To show the practicality of this method, four electrical circuits are investigated numerically and experimentally for a piezoelectric beam energy harvester: Simple Resistive Load, Inductive Load, standard AC-DC, and Inductive AC-DC circuits. An Inductive Load circuit is built by adding an inductor to a Simple Resistive Load circuit, while an Inductive AC-DC circuit is built by adding an inductor to a standard AC-DC circuit. Experimental results indicate that the Inductive Load and the Inductive AC-DC circuits avail the Simple Resistive Load and standard AC-DC circuits respectively. The inductive AC-DC circuit shows a 6.7% increase in the output power compared to the standard AC-DC circuit.


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