Deposition of thin films using the ionised cluster beam method

1990 ◽  
Vol 5 (7) ◽  
pp. 771-781 ◽  
Author(s):  
S E Huq ◽  
R A McMahon ◽  
H Ahmed
Keyword(s):  
Thin Films ◽  
Cluster Beam ◽  
Beam Method

Fullerene-tetracyanoquinodimethane thin film and novel electrical bistability

1996 ◽  
Vol 11 (4) ◽  
pp. 859-860 ◽  
Author(s):  
H. J. Gao ◽  
Z. Q. Xue ◽  
Q. D. Wu ◽  
S. J. Pang
Keyword(s):  
Complex System ◽  
Thin Films ◽  
Transition Point ◽  
Charge Transfer Complex ◽  
High Vacuum ◽  
Vacuum System ◽  
Cluster Beam ◽  
Electrical Bistability ◽  
Transmission Electron ◽  
Beam Method

We report the electrical bistability of C60-tetracyanoquinodimethane (TCNQ) thin films fabricated by using an ionized-cluster-beam method in a high vacuum system. The films were characterized by transmission electron microscopy and electronic absorption spectroscopy. The spectroscopic results showed evidence of the formation of the charge-transfer complex system in C60-TCNQ thin films, and the TEM results revealed the microstructure of the films. The film thickness is ∼100 nm. The electromotive intensity at the transition point was of the order of 106 V/m. The possible mechanism of the electrical phenomena of the films is discussed in the paper.

Epitaxial Growth of TiO2Rutile Thin Films on Sapphire Substrates by a Reactive Ionized Cluster Beam Method

1993 ◽  
Vol 32 (Part 1, No. 8) ◽  
pp. 3561-3565 ◽  
Author(s):  
Kazunori Fukushima ◽  
Gikan H. Takaoka ◽  
Isao Yamada
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Cluster Beam ◽  
Sapphire Substrates ◽  
Beam Method

Characteristics of Polyethylene Thin Films Deposited by Ionized Cluster Beam

1987 ◽  
Vol 108 ◽  
Author(s):  
Hiroaki Usui ◽  
Kouji Numata ◽  
Hitoshi Dohmoto ◽  
Isao Yamada ◽  
Toshinori Takagi
Keyword(s):  
Thin Films ◽  
Chemical Structure ◽  
Field Measurements ◽  
Breakdown Field ◽  
Cluster Beam ◽  
Electrical Insulator ◽  
Polyethylene Films ◽  
Interface Property ◽  
Stable Chemical ◽  
Film Substrate

ABSTRACTPolyethylene thin films were deposited by the ionized cluster beam (ICB) method. The dielectric, resistivity, and breakdown field measurements showed that the ICB polyethylene films have excellent properties as an electrical insulator. The characteristics of Au/polyethylene/Si MIS diodes and MISFErs indicated that the ICB method can control the film-substrate interface property. The SIMS and ESCAan alyses showed that the ICB films have pure and stable chemical structure.

PTCDA Films Deposited by Ionized Beam Method

1993 ◽  
Vol 316 ◽  
Author(s):  
Hiroaki Usui ◽  
Kiyoshi Kashihara ◽  
Kuniaki Tanaka ◽  
Seizo Miyata
Keyword(s):  
Thin Films ◽  
Molecular Orientation ◽  
Chemical Structure ◽  
Chemical Change ◽  
The Other ◽  
Ion Acceleration ◽  
Ionization Condition ◽  
Other Hand ◽  
Beam Method

ABSTRACTThin films of 3,4,9,10-perylenetetracarboxylic-dianhydride (PTCDA) were deposited by an ionized beam method. The molecular orientation and chemical structure of the films were studied in connection with ionization and ion acceleration conditions. At a low ionization condition, the molecules are oriented in parallel with the substrate, and the crystallinity was improved by an appropriate ion acceleration. At higher ionization conditions, on the other hand, ion acceleration resulted in a loss of crystallinity. Deposited molecules undergo chemical change in such a condition, leading to dissociation of dianhydride groups.

Low-temperature fabrication of high-quality (Ba, Sr)TiO3 films using charged liquid cluster beam method

2002 ◽  
Vol 17 (8) ◽  
pp. 1888-1891 ◽  
Author(s):  
Hyungsoo Choi ◽  
Sungho Park ◽  
Yi Yang ◽  
HoChul Kang ◽  
Kyekyoon (Kevin) Kim ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Temperature ◽  
Cluster Beam ◽  
High Quality ◽  
Carboxylate Ligands ◽  
Si Substrates ◽  
Beam Method ◽  
Temperature Deposition ◽  
Bst Films ◽  
Substrate Temperatures

Low-temperature deposition of high-quality (Ba, Sr)TiO3 (BST) thin films was achieved in air on Pt/Ti/SiO2/Si substrates using the charged liquid cluster beam (CLCB) method. The Ba, Sr, and Ti precursors were synthesized using alkoxy carboxylate ligands to tailor their physical properties to the CLCB process. The as-deposited BST films fabricated at substrate temperatures as low as 280 °C exhibited high purity. The leakage current density and dielectric constant of the film, deposited at 300 °C and subsequently annealed at 700 °C, were 2.5 × 10−9 A/cm2 at 1.5 V and 305, respectively.

Ionized‐cluster‐beam deposition and electrical bistability of C60–tetracyanoquinodimethane thin films

1996 ◽  
Vol 68 (16) ◽  
pp. 2192-2194 ◽  
Author(s):  
H. J. Gao ◽  
Z. Q. Xue ◽  
K. Z. Wang ◽  
Q. D. Wu ◽  
S. Pang
Keyword(s):  
Thin Films ◽  
Cluster Beam ◽  
Electrical Bistability ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Raman and Electron Spin Resonance Investigations of as Prepared and Thermal Annealed Cluster Beam Deposited Carbon Thin Films

2005 ◽  
Vol 887 ◽  
Author(s):  
Giuseppe Compagnini ◽  
Orazio Puglisi ◽  
Mircea Chipara
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Resonance Line ◽  
Carbon Cluster ◽  
Single Line ◽  
Carbon Clusters ◽  
Cluster Beam ◽  
Spin Resonance

ABSTRACTNanostructured amorphous carbon thin films deposited by a Low Energy Carbon Cluster Beam Deposition technique have been characterized by Raman spectroscopy and Electron Spin Resonance (ESR). This study focuses on the correlation between carbon cluster structure and sp2 related defects. The ESR spectrum of as prepared and thermally annealed carbon clusters is a single line located near the free electron g-factor. Resonance lines were accurately fitted by a single line symmetric and narrow Lorentzian line. The resonance line parameters (line position, line amplitude, and line width) were found to be extremely sensitive to the thermal treatment of the as deposited samples. The paramagnetic centres are randomly distributed and correlated with the nanosized nature of the investigated system. The absence of the resonance line asymmetry, typical for the ESR spectra of conducting carbaceneous materials, confirms the small size of carbon nanoclusters and indicates poor electrical contacts between them. The resonance line parameters (position, intensity, and width) are not affected by the orientation of the carbon cluster film relative to the direction of the external magnetic field. The evolution of the ESR signal upon thermal treatments is sensitive to the increase of the sp2 average domain size as revealed by Raman spectroscopy. The Raman spectrum of as obtained and thermally annealed carbon clusters, in the domain 1000 cm−1 to 2000 cm−1 shows two Lorentzian lines located at 1300 cm−1 and 1550 cm−1 representing the D and G bands. The position and amplitude of these lines were found to be affected by thermal annealing.

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