PTCDA Films Deposited by Ionized Beam Method

1993 ◽  
Vol 316 ◽  
Author(s):  
Hiroaki Usui ◽  
Kiyoshi Kashihara ◽  
Kuniaki Tanaka ◽  
Seizo Miyata
Keyword(s):  
Thin Films ◽  
Molecular Orientation ◽  
Chemical Structure ◽  
Chemical Change ◽  
The Other ◽  
Ion Acceleration ◽  
Ionization Condition ◽  
Other Hand ◽  
Beam Method

ABSTRACTThin films of 3,4,9,10-perylenetetracarboxylic-dianhydride (PTCDA) were deposited by an ionized beam method. The molecular orientation and chemical structure of the films were studied in connection with ionization and ion acceleration conditions. At a low ionization condition, the molecules are oriented in parallel with the substrate, and the crystallinity was improved by an appropriate ion acceleration. At higher ionization conditions, on the other hand, ion acceleration resulted in a loss of crystallinity. Deposited molecules undergo chemical change in such a condition, leading to dissociation of dianhydride groups.

Growth of Epitaxial Site-Engineered Bi4Ti3O12-Basded Thin Films by Mocvdand Their Characterization

2002 ◽  
Vol 748 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Tomohiro Sakai ◽  
Takayuki Watanabe ◽  
Minoru Osada ◽  
Masato Kakihana ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Spontaneous Polarization ◽  
Chemical Vapor ◽  
The Other ◽  
Other Hand ◽  
La Substitution ◽  
Lower Temperature

ABSTRACTThin films of BIT, La-substituted BIT (BLT) and La- and V-cosubstituted BIT(BLTV) were epitaxially grown on SrRuO3//SrTiO3 substrates at 850°C by metalorganic chemical vapor deposition (MOCVD), and their electrical properties were systematically compared. All films on (100), (110) and (111)-oriented substrates were epitaxially grown with (001)-, (104)-/(014)-and (118) –preferred orientations, respectively. The leakage current density of the BLTV film was almost the same with that of the BLT film, but was smaller than that of BIT film, suggesting that the La substitution contributed to the decrease of the leakage current density especially in pseudoperovskite layer. Spontaneous polarization of the BLTV film was estimated to be almost the same with the BLT film but was smaller that that of the BIT film. This is explained by the decrease of Tc with the La substitution, while V did not contribute to the change of the Curie temperature (Tc ). On the other hand, the coercive field (Ec) value of the BLTV was smaller than that of the BIT and the BLT films. As a result, La substitution contributed to the decrease of the leakage current density together with the decrease of the spontaneous polarization due to the decrease of the Tc. On the other hand, V substitution contributes to the decrease of the defects that suppress the domain motion and increases the Ec value. Therefore, each substitution of La and V plays different roles and this contribution is remarkable for the films deposited at lower temperature.

The Intercorrelation Between Microstructure and Chemicalmechanical Polish of Metal Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Ying-Lang Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Removal Rate ◽  
Metal Films ◽  
The Other ◽  
Metal Thin Films ◽  
Other Hand ◽  
Underlying Mechanisms ◽  
Table Speed

AbstractThe correlation between microstructures of Al and W metal thin films and their respective CMP performance is investigated. It is found that CMP removal rate decreases with increasing grain size. In both cases, the textures of the metal films are altered and their resistivity increased after CMP. The phenomenon is more pronounced for polish under a greater down force. The table speed, on the other hand, has only minimum effects on microstructure and resistivity. The possible underlying mechanisms leading to this phenomenon are proposed and their potential impacts on metallization reliability is discussed.

scholarly journals Production of Polyvinylpyrrolidone Nanowebs Containing Zinc Cyclohexane Mono Carboxylate via Electrospinning and Investigatıon of Antibacterial Effıciency

2019 ◽  
Vol 27 (6(138)) ◽  
pp. 91-96
Author(s):  
Aylin Yildiz ◽  
Riza Atav ◽  
Mine Aydin
Keyword(s):  
Antimicrobial Activity ◽  
Chemical Structure ◽  
Antibacterial Properties ◽  
The Other ◽  
Antibacterial Efficiency ◽  
E Coli ◽  
Other Hand ◽  
Edx Analyses

In this study, after the synthesis of zinc cyclohexane mono carboxylate, its chemical structure was analysed with FTIR and TGA. Then electrospun polyvinylpyrrolidone nanofibres containing zinc cyclohexane mono carboxylate were produced and antibacterial properties of the nanowebs obtained were investigated for their use in the textile field When the FTIR results of the nanofibres containing different concentrations of zinc cyclohexane monocarbocylate are examined, an –OH peak similar to that of PVP fibres is noticed. These results clearly indicate that zinc cyclohexane monocarboxylate is included in PVP. When the TGA spectra of CHMCZn-doped nanofibres at different ratios are examined, it is seen that they give more similar results than polyvinylprolidone nanofibres alone. According to the SEM-EDX analyses, it was observed that the fibre diameters obtained were in the range of 145 - 947 nm. On the other hand, antimicrobial activity against B. subtilis, S. aureus and E. coli strains was detected, found regardless of the CHMCZn concentration.

Persistent Electronic Conduction in 12CaO7Al2O3 Thin Films Produced by Ar Ion Implantation: Selective Kick-Out Effect Leads to Electride Thin Films

2004 ◽  
Vol 811 ◽  
Author(s):  
Masashi Miyakawa ◽  
Katsuro Hayashi ◽  
Yoshitake Toda ◽  
Toshio Kamiya ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
The Other ◽  
New Method ◽  
Electronic Conduction ◽  
High Concentration ◽  
Electronic Conductor ◽  
Other Hand

ABSTRACTA new method to convert 12CaO7Al2O3 (C12A7) thin films to electronic conductor by hot Ar+ ion implantation has been developed and its mechanism is discussed. It was found that hot Ar+ ion implantation extruded free O2- ions in C12A7 films by kick-out effects at fluences higher than 1×1017 cm−2, which left electrons in the cages embedded in C12A7 crystal and produced high concentration F+-like centers (∼1.4×1021 cm−3). The resulting films show coloration and persistent electronic conduction with conductivities up to ∼1 Scm−1. On the other hand, fluences less than 1×1017 cm−2 kept the films transparent and insulating.

Atomistic Simulations of Dislocation-Interface Interactions in Thin Films

2004 ◽  
Vol 821 ◽  
Author(s):  
R. W. Leger ◽  
Y.-L. Shen
Keyword(s):  
Thin Films ◽  
Parametric Analysis ◽  
The Other ◽  
Atomistic Simulations ◽  
Molecular Statics ◽  
Nano Scale ◽  
Sliding Interface ◽  
Bonded Interface ◽  
Other Hand ◽  
Transitional Behavior

AbstractAtomistic simulations are carried out to study the effect of atomic sliding capability at the interface between a plastically deforming film and a stiff substrate. Molecular statics modeling is utilized to corroborate the overall film response and the nano-scale defect mechanisms. A free-sliding interface is shown to be able to cause “reflection” of oncoming dislocations and enhance film plasticity. A rigidly bonded interface, on the other hand, is seen to resist approaching dislocations. Partial sliding results in a transitional behavior between the two extremes, as revealed in our parametric analysis. The sliding capability of interface atoms is also seen to dictate the overall film response.

Transport Properties of CaSi2 and Ca2Si Thin Films

2020 ◽  
Vol 312 ◽  
pp. 3-8
Author(s):  
L. Dermenji ◽  
K.G. Lisunov ◽  
Konstantin Nickolaevich Galkin ◽  
Dmitrii L. Goroshko ◽  
E.A. Chusovitin ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Fields ◽  
Transport Properties ◽  
Hall Coefficient ◽  
Charge Carriers ◽  
The Other ◽  
Temperature Range ◽  
Other Hand ◽  
Complex Dependence

Resistivity, r (T), and Hall coefficient in weak (B < 1 T) magnetic fields, R (T), are investigated in Ca2Si and CaSi2 films at temperatures T between ~ 20 - 300 K. In CaSi2, r (T) is typical of metals increasing with T within the whole temperature range. On the other hand, the resistivity of Ca2Si is pertinent of semiconductors. Namely, it is activated below T ~ 200 K, exhibiting different slopes of ln r vs. T -1 plots at lower and higher T, and a weak increase between T ~ 200 - 300 K. Both materials demonstrate a complex dependence of R (T), including a change of the sign. Transport properties above have been analyzed assuming two groups of charge carriers, electrons and holes, contributing them.

Structure Analysis of CeO2/ZrO2/Si Multilayer Thin Films by HRTEM

1999 ◽  
Vol 592 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Structure Analysis ◽  
Columnar Structure ◽  
The Other ◽  
Multilayer Thin Films ◽  
Misfit Dislocations ◽  
Other Hand

ABSTRACTThe dependence of the structures of the CeO2/YSZ (Y2O3-ZrO2)/Si multilayer thin films on the YSZ thickness was investigated by HRTEM. The CeO2/YSZ interface is semicoherent with misfit dislocations for the films with 110 nm and 30 nm YSZ thickness. On the other hand, the structure of the films with 0.5 nun YSZ layer are very muzzy since the YSZ is very disordered. However, the CeO2 layer on the 0.5 nm of the YSZ has the lowest mosaicity (highest quality) near the surface, although once the epitaxy is weakened in the YSZ layer and the CeO2 layer just above the YSZ. The mosaicity of the YSZ layer is thought not to be taken over into the CeO2 layer since the columnar structure of the thinner YSZ layer becomes obscure. Moreover, a YSZ layer of only 0.5 nm could inhibit the reduction of CeO2 by Si. The ultra thin YSZ layer of 0.5 nm is necessary because it inhibits the growth of the columnar structure and protects the protection of CeO2 layer from reduction.

Study of Hf Diffusion in A-Zr using Rutherfdrd Bacckscrttering Spectroscopy

1989 ◽  
Vol 157 ◽  
Author(s):  
F. Dyment ◽  
M. Behar ◽  
H. Oners ◽  
P.L. Grande ◽  
E. Savino ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Coefficients ◽  
The Other ◽  
Present Contribution ◽  
Temperature Range ◽  
Other Hand

ABSTRACTThe present contribution reports on measurements of the diffusion coefficients of Hf in a-Zr via the RBS technique. 250 8 Hf thin films were deposited on two kinds of polycrystalIine Zr samples and annealed in a 773-1115 K temperature range. Our results show that in both cases, the diffusion coefficients follow curved flrrhenius plots. On the other hand for the purest Zr sample we have obtained diffusion coefficients that are systematicaly and significativel ly lower than those corresponding to the Zr sample richer in impurities.

Fate of Triglycerides and Phospholipids of Lymph and Artificial Fat Emulsions: Disappearance From the Circulation

1958 ◽  
Vol 193 (2) ◽  
pp. 294-300 ◽  
Author(s):  
Esther L. McCandless ◽  
D. B. Zilversmit
Keyword(s):  
Chemical Structure ◽  
The Other ◽  
Plasma Lipoproteins ◽  
Disappearance Rate ◽  
Fat Emulsion ◽  
Fat Emulsions ◽  
Other Hand

Artificial fat emulsions labeled in either triglyceride or phospholipid component were administered to unanesthetized normal dogs to determine the disappearance rates of the two lipids from the circulation. Similar experiments were carried out using lymph from donor dogs fed I131-triolein or P32-phosphate with unlabeled triglyceride. Triglycerides were found to be rapidly removed from the circulation whether they were administered as an artificial fat emulsion or as a physiological emulsion, lymph. On the other hand, the emulsifying agents, liver lecithin or lymph phospholipid, required several hours for removal from the circulation. Evidence is presented that the slow disappearance rate of chylomicron phospholipids cannot be accounted for by exchange with plasma lipoproteins and indicates a slow removal of chylomicra phospholipid from the circulating blood. These findings are discussed in reference to current concepts of the chemical structure of lymph chylomicrons and of particulate fat in an artificial fat emulsion.

X-Ray Measurement of Residual Stress Distribution in Sputtered Cu Thin Films

2012 ◽  
Vol 706-709 ◽  
pp. 1649-1654 ◽  
Author(s):  
Yoshiaki Akiniwa ◽  
Taku Sakaue
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Grain Size ◽  
Stress Distribution ◽  
Residual Stress Distribution ◽  
The Other ◽  
X Ray ◽  
Maximum Value ◽  
Other Hand ◽  
Target Power

Three kinds of copper thin films were fabricated by RF-magnetron sputtering. The target power was selected to be 10 and 150 W to change the properties of the films. Thin glass sheet was used as a substrate. For the target power of 150 W, the deposition time was selected to be 7 and 40 min. The thickness was 0.6 μm and 2.9 μm, and the grain size measured was 243 nm and 450 nm, respectively. The grain size of thicker film was larger than that of thinner one. On the other hand, for the target power of 10 W, the thickness and grain size were 2.4 μm and 54 nm, respectively. The grain size depends on the target power. The residual stress distribution in the films was measured by X-ray method. Several methods such as the grazing incidence X-ray diffraction method, the constant penetration depth method and the conventional sin2ψ method were adopted. The measured weighted average stress increased with increasing depth. After taking the maximum value at about 0.3 μm from the surface, the value decreased with increasing depth. The stress distribution near the surface in the films deposited at 150 W was almost identical irrespective of thickness. On the other hand, for the target power of 10 W, the stress distribution shifted to compression side. The reason could be explained by the effect of the thermal residual stress. The real stress distribution was estimated by using the optimization technique. The stress took the maximum value at 0.5 μm from the surface, and was compressive near the substrate. .

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