Surface resistance of YBa2Cu3O7  thin films on MgO lattice-matched BaZrO3buffer layers

2004 ◽  
Vol 17 (3) ◽  
pp. 337-341 ◽  
Author(s):  
Masashi Mukaida ◽  
Yuya Yamazaki ◽  
Yuki Shingai ◽  
Sayoko Makino ◽  
Masanobu Kusunoki ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Resistance ◽  
Lattice Matched

Structural and magnetic properties of NiFe2O4 thin films grown on isostructural lattice-matched substrates

2021 ◽  
Vol 118 (15) ◽  
pp. 152402
Author(s):  
Sudhir Regmi ◽  
Zhong Li ◽  
Abhishek Srivastava ◽  
Rabin Mahat ◽  
Shambhu KC ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Structural And Magnetic Properties ◽  
Lattice Matched

Hydroxylated secondary dopants for surface resistance enhancement in transparent poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonate) thin films

2004 ◽  
Vol 142 (1-3) ◽  
pp. 187-193 ◽  
Author(s):  
Brett D Martin ◽  
Nikolay Nikolov ◽  
Steven K Pollack ◽  
Alexey Saprigin ◽  
R Shashidhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Resistance

Correlation between surface resistance of Yba2Cu3O7-δ thin films and oxygen pressure during deposition process

1997 ◽  
Vol 282-287 ◽  
pp. 591-592 ◽  
Author(s):  
R.X. Wu ◽  
S.Z. Yang ◽  
Y.L. Zhou ◽  
B.B. Jin ◽  
M. Qian ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Surface Resistance ◽  
Deposition Process

Application of ZnO to Passivate the GaN-based Device Structures

2007 ◽  
Vol 1035 ◽  
Author(s):  
Eliana Kaminska ◽  
Anna Piotrowska ◽  
Marie-Antoinette di Forte Poisson ◽  
Sylvain Delage ◽  
Hacene Lahreche ◽  
...  
Keyword(s):  
Thin Films ◽  
Sputter Deposition ◽  
High Resistivity ◽  
Leakage Currents ◽  
Gan Hemt ◽  
Reactive Sputter Deposition ◽  
Device Structures ◽  
Hygroscopic Nature ◽  
Output Characteristics ◽  
Lattice Matched

AbstractThe fabrication of high-resistivity ZnO-based thin films lattice-matched to AlGaN/GaN structures has been developed. It relies on low-temperature reactive sputter deposition of ZnO:Sb from ZnSb target. Taking into account the hygroscopic nature of ZnO surface, an additional coating by Si3N4 films is applied to ensure the humidity protecition. The developped passivation suppresses leakage currents in Schottky diods, and substantially improves output characteristics of AlGaN/GaN HEMT.

Effect of Stress on the Carrier Contribution to Elastic Constants in Thin Films of Small Gap Compounds

1993 ◽  
Vol 308 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Sambhu Nath Biswas
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Experimental Method ◽  
Elastic Constants ◽  
Electron Concentration ◽  
Ultrathin Films ◽  
Theoretical Formulation ◽  
Lattice Matched

ABSTRACTIn this paper we have investigated the carrier contribution to elastic constants in very thin films of stressed small gap compounds within the domain of theory. It is found, taking stressed ultrathin films Hg1-xCdxTe and In1-xGaxAsyP1-y lattice matched to InP as examples, that the elastic constants increase with increasing electron concentration and decreasing film thickness respectively in oscillatory manners. Besides the stress enhances the numerical values of such contribution to the elastic constants. In addition, the theoretical formulation is in agreement with the suggested experimental method of determining such constants in materials having arbitary dispersion laws.

rf surface resistance of Y-Ba-Cu-O thin films

1988 ◽  
Vol 38 (10) ◽  
pp. 7019-7022 ◽  
Author(s):  
M. S. DiIorio ◽  
Alfredo C. Anderson ◽  
B. -Y. Tsaur
Keyword(s):  
Thin Films ◽  
Surface Resistance
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