Correlation between surface resistance of Yba2Cu3O7-δ thin films and oxygen pressure during deposition process

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

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Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154937 ◽

1989 ◽

Vol 47 ◽

pp. 592-593

Author(s):

J.B. Posthill ◽

R.P. Burns ◽

R.A. Rudder ◽

Y.H. Lee ◽

R.J. Markunas ◽

...

Keyword(s):

Thin Films ◽

Wide Band ◽

Deposition Process ◽

Heteroepitaxial Growth ◽

Electron Microscopic ◽

Wide Band Gap ◽

Lattice Matching ◽

Different Types ◽

Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

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Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽

10.3390/coatings11030307 ◽

2021 ◽

Vol 11 (3) ◽

pp. 307

Author(s):

Diana Griesiute ◽

Dovydas Karoblis ◽

Lina Mikoliunaite ◽

Aleksej Zarkov ◽

Andrei N. Salak ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Cost Effective ◽

Deposition Process ◽

Stability Study ◽

Fused Silica ◽

Chemical Solution ◽

Solution Deposition ◽

Optimal Annealing Temperature ◽

Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

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Optimization of the pulsed laser deposition process of In2O3 thin films for ferroelectric field effect device applications

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-04935-x ◽

2021 ◽

Author(s):

Meng Xu ◽

Lei Guo ◽

Jian-Min Yan ◽

Zhi-Xue Xu ◽

Hui Wang ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Field Effect ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Device Applications

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Effect of Oxygen Pressure on the Surface Roughness and Intergranular Behavior of YBCO Thin Films

Journal of Superconductivity and Novel Magnetism ◽

10.1007/s10948-016-3457-7 ◽

2016 ◽

Vol 29 (6) ◽

pp. 1483-1489 ◽

Cited By ~ 4

Author(s):

S. Aghabagheri ◽

M. R. Mohammadizadeh ◽

P. Kameli ◽

H. Salamati

Keyword(s):

Thin Films ◽

Surface Roughness ◽

Oxygen Pressure ◽

Ybco Thin Films ◽

Effect Of Oxygen

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Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

Journal of Materials Research ◽

10.1557/jmr.2000.0245 ◽

2000 ◽

Vol 15 (8) ◽

pp. 1702-1708

Author(s):

Ruichao Zhang ◽

Ren Xu

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Single Phase ◽

Chemical Vapor ◽

Deposition Process ◽

Thin Layers ◽

Metal Alkoxide ◽

Stoichiometry Control ◽

Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

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