Space-charge anomalies in insulators caused by non-local impact ionisation

1989 ◽  
Vol 1 (39) ◽  
pp. 7021-7031 ◽  
Author(s):  
B K Ridley ◽  
F A El-Ela
Keyword(s):  
Space Charge ◽  
Non Local ◽  
Local Impact ◽  
Impact Ionisation

scholarly journals Non-local impact of link failures in linear flow networks

2019 ◽  
Vol 21 (5) ◽  
pp. 053009 ◽  
Author(s):  
Julius Strake ◽  
Franz Kaiser ◽  
Farnaz Basiri ◽  
Henrik Ronellenfitsch ◽  
Dirk Witthaut
Keyword(s):  
Flow Networks ◽  
Linear Flow ◽  
Link Failures ◽  
Non Local ◽  
Local Impact

Lifetime Calculations of MOSFET’s Using Depth-Dependent Non-Local Impact Ionization

1993 ◽  
pp. 469-472
Author(s):  
M. J. van Dort ◽  
J. W. Slotboom ◽  
G. Streutker ◽  
P. H. Woerlee
Keyword(s):  
Impact Ionization ◽  
Non Local ◽  
Local Impact

Non-local impact of large-scale engineering in harbors and gulfs on the environment

2002 ◽  
Vol 29 (7) ◽  
pp. 739-752 ◽  
Author(s):  
Eduard Amromin ◽  
Svetlana Kovinskaya ◽  
Valentin Sofronov
Keyword(s):  
Large Scale ◽  
Non Local ◽  
Local Impact

scholarly journals Non Local Impact Ionization Effects in Semiconductor Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 291-297 ◽  
Author(s):  
Duilio Meglio ◽  
Corrado Cianci ◽  
Aldo Di Carlo ◽  
Paolo Lugli
Keyword(s):  
Carrier Transport ◽  
Impact Ionization ◽  
Semiconductor Devices ◽  
High Energy ◽  
Drift Diffusion ◽  
Non Local ◽  
Local Impact ◽  
Ionization Coefficients ◽  
The Impact ◽  
Space Effects

Impact ionization processes define the breakdown characteristics of semiconductor devices. An accurate description of such phenomenon, however, is limited to very sophisticated device simulators such as Monte Carlo. A new physical model for the impact ionization process is presented, which accounts for dead space effects and high energy carrier transport at a Drift Diffusion level. Such model allows to define universal impact ionization coefficients which are device-geometry independent. By using available experimental data these parameters have been calculated for In0.53Ga0.47As.

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