Electronic structures of amorphous M100-xZrxalloys (M = Fe, Co, Ni, Cu) studied using core-level x-ray photoemission spectroscopy

2000 ◽  
Vol 12 (27) ◽  
pp. 5991-6008 ◽  
Author(s):  
J-S Kang ◽  
S J Kwon ◽  
S K Kwon ◽  
K B Lee ◽  
B I Min
Author(s):  
Kaname Kanai ◽  
Takuya Inoue ◽  
Takaya Furuichi ◽  
Kaito Shinoda ◽  
Takashi Iwahashi ◽  
...  

A series of n-cycloparaphenylenes ([n]CPP) were studied by ultraviolet photoemission, inverse photoemission, ultraviolet-visible absorption, and X-ray photoemission spectroscopy to detect their unique electronic structures. [n]CPP has a cyclic structure in...


2002 ◽  
Vol 734 ◽  
Author(s):  
X. D. Feng ◽  
D. Grozea ◽  
Z. H. Lu

ABSTRACTWe studied the poly [2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/LiF/Al interface by angle-dependent X-ray photoemission spectroscopy (XPS). The changes in the C1s, O 1s, Al 2p core level spectra, and the evolution of O to C and Li to F atomic ratios at different photoelectron take-off angles were carefully analyzed. A reduced oxygen concentration with a LiF layer at the interface suggests that LiF can help reduce the oxidation of Al. The interface was found rich in Li+ ions, some of which might be attached to MEH-PPV to form “N type” doping. The electron injection layer consists of Li+doped MEH-PPV, LiF, Al oxides, and metallic Al.


1983 ◽  
Vol 25 ◽  
Author(s):  
W. G. Petro ◽  
T. Kendelewicz ◽  
I. A. Babalola ◽  
I. Lindau ◽  
W. E. Spicer

ABSTRACTRoom-temperature interfacial reactions at the Ag/InP (110) interface have been studied using soft x-ray photoemission spectroscopy of the In 4d and P 2p core levels. For low Ag coverages (less than 1 monolayer (ML)) no measurable change in core level shapes is observed, and the shift in core level position is due solely to band bending. At high Ag coverages (up to 72 ML) we observe dissociated In metal, P atoms near the surface, and Ag clustering. Fermi level movement is deduced from these spectra using a deconvolution technique, and pinning positions of 0.40 ± 0.05 eV below the conduction-band minimum for n-type and 0.5 ± 0.l eV above the valence-band maximum for p-type are found. These positions are in close agreement with calculations of native defect levels.


2004 ◽  
Vol 95 (7) ◽  
pp. 3527-3534 ◽  
Author(s):  
C. W. Ong ◽  
H. Huang ◽  
B. Zheng ◽  
R. W. M. Kwok ◽  
Y. Y. Hui ◽  
...  

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