Switching the in-plane easy axis by ion implantation in rare earth based magnetic films

2013 ◽  
Vol 25 (8) ◽  
pp. 086002 ◽  
Author(s):  
A R Buckingham ◽  
D Wang ◽  
G B G Stenning ◽  
G J Bowden ◽  
I Nandhakumar ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Easy Axis ◽  
Magnetic Films

CORRELATIONS BETWEEN STRUCTURE AND MAGNETISM IN THIN FILMS AND NANOSTRUCTURES

1999 ◽  
Vol 06 (05) ◽  
pp. 753-761 ◽  
Author(s):  
P. LE FÈVRE ◽  
H. MAGNAN ◽  
A. MIDOIR ◽  
D. CHANDESRIS ◽  
H. JAFFRÈS ◽  
...  
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Structural Relaxation ◽  
Easy Axis ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Films ◽  
Bulk Solids ◽  
Thin Magnetic Films ◽  
Distorted Structure ◽  
Crystallographic Structures

The bidimensionnal character of thin magnetic films deposited on single-crystal substrates, together with the occurrence of singular crystallographic structures, often confer on these systems electronic properties that cannot be found in bulk solids. For example, thin Ni layers deposited on Cu(001) present a perpendicular magnetic anisotropy in a very wide thickness range. We will show that this can be explained by a distorted structure of Ni, originating from the strain induced by the epitaxy on the Cu substrate. In this field of 2D magnetism, nanostructures are now investigated. Thin Fe layers on MgO(001) were cut into stripes by the "atomic saw" method: a compression of the substrate induces a dislocation slipping which saws both the substrate and the Fe film in regular and separated ribbons. The observed perpendicular to the stripes magnetization easy axis will be explained by a structural relaxation occurring during the structuration process. In these two studies, a precise structural characterization and simple magnetoelastic models allow one to describe the magnetic behaviors of these systems.

Rare Earth Ion Implantation for Silicon Based Light Emission

2005 ◽  
Vol 108-109 ◽  
pp. 755-760 ◽  
Author(s):  
Wolfgang Skorupa ◽  
J.M. Sun ◽  
S. Prucnal ◽  
L. Rebohle ◽  
T. Gebel ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Indium Tin Oxide ◽  
Light Emission ◽  
Charge Trapping ◽  
Electrical Performance ◽  
Rare Earth Ion ◽  
Light Emitting ◽  
Silicon Based ◽  
Luminescent Centers

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

scholarly journals Influence of 4f filling on electronic and magnetic properties of rare earth-Au surface compounds

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22258-22267
Author(s):  
L. Fernandez ◽  
M. Blanco-Rey ◽  
R. Castrillo-Bodero ◽  
M. Ilyn ◽  
K. Ali ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Rare Earth ◽  
Easy Axis ◽  
Mixed Valence ◽  
Electronic And Magnetic Properties ◽  
Surface Compounds ◽  
Out Of Plane

HoAu2, YbAu2 and GdAu2 surface compounds are investigated by electron spectroscopies, microscopy and theory. Yb in YbAu2 reveals a mixed valence character while Gd and Ho are trivalent. HoAu2 is ferromagnetic with an out-of-plane easy axis and TC = 22 K.

Rare earth doping of III-nitride alloys by ion implantation

2008 ◽  
Vol 205 (1) ◽  
pp. 34-37 ◽  
Author(s):  
K. Lorenz ◽  
E. Alves ◽  
I. S. Roqan ◽  
R. W. Martin ◽  
C. Trager-Cowan ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Implantation ◽  
Rare Earth Doping ◽  
Nitride Alloys

SITE MULTIPLICITY OF RARE EARTH IONS IN III-NITRIDES

2004 ◽  
Vol 831 ◽  
Author(s):  
K.P. O'Donnell ◽  
V. Katchkanov ◽  
K. Wang ◽  
R.W. Martin ◽  
P.R. Edwards ◽  
...  
Keyword(s):  
Fine Structure ◽  
Rare Earth ◽  
Ion Implantation ◽  
Electron Emission ◽  
Optical Spectra ◽  
Rare Earth Ions ◽  
Lattice Location ◽  
X Ray ◽  
Low Concentrations ◽  
X Ray Absorption

ABSTRACTThis presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the well-documented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.

scholarly journals Phase formation and magnetic properties of Co-rare earth magnetic films

1998 ◽  
Vol 83 (11) ◽  
pp. 6244-6246 ◽  
Author(s):  
Y. Liu ◽  
Richard A. Thomas ◽  
S. S. Malhotra ◽  
Z. S. Shan ◽  
S. H. Liou ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Rare Earth ◽  
Phase Formation ◽  
Magnetic Films

scholarly journals Ground State of the Easy-Axis Rare-Earth Kagome LangasitePr3Ga5SiO14

2010 ◽  
Vol 104 (5) ◽  
Author(s):  
A. Zorko ◽  
F. Bert ◽  
P. Mendels ◽  
K. Marty ◽  
P. Bordet
Keyword(s):  
Rare Earth ◽  
Ground State ◽  
Easy Axis

Micromagnetic Simulations Of Domain Structures In Thin Films And Bulk Hard Magnets

1999 ◽  
Vol 5 (S2) ◽  
pp. 36-37
Author(s):  
Zhi-Xiong Cai ◽  
Yimei Zhu
Keyword(s):  
Thin Films ◽  
Magnetic Materials ◽  
Domain Structure ◽  
Easy Axis ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Electron Holography ◽  
Bulk Materials ◽  
Hard Magnetic Materials ◽  
Domain Structures

The shape anisotropy of a magnetic thin film competes with the easy-axis anisotropy, which gives rise to different domain structures compared to the bulk magnetic materials. Recent Lorentz microscope and electron holography and differential-phase-contrast experiments show complex domain structures with features not found in bulk materials seen by magneto-optic method.In this report we use micromagnetic simulation techniques to study the effect of thickness on the domain structure of magnetic thin films with various orientations relative to the easy axis and compare with those in the bulk materials. The results of the simulations can be used to compare with the data obtained using electron holography experiments to give us quantitative understanding of the domain structure in hard magnetic materials.We model the magnetic films with an array of dipoles of size 16×l6×Lz, where Lz the thickness of the sample.

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