Three-dimensional etching of silicon substrates using a modified deep reactive ion etching technique

ABSTRACTMicroneedles have applications in drug delivery and biotechnology. We report a novel needle-like hollow cylindrical structure as a base for the growth of carbon nanotubes (CNT) to form a cage-like structure. The formation of hollow microneedle structures is feasible on Si-membranes using proper patterning of the masking layer and combined by a deep reactive ion etching. The formation of highly featured structures at micro and nanometric scale is reported. By controlling the etching parameter one is able to achieve three-dimensional as well as highly vertical structures on silicon substrates. The growth of carbon nanotubes on such structures allows the realization of cage-like carbon-based features which could be suitable for gas and liquid transport.

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Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment

Simulation of Semiconductor Processes and Devices 2007 ◽

10.1007/978-3-211-72861-1_13 ◽

2007 ◽

pp. 53-56 ◽

Cited By ~ 1

Author(s):

Andreas Hössinger ◽

Zoran Djurić ◽

Artem Babayan

Keyword(s):

Reactive Ion Etching ◽

Three Dimensional ◽

Simulation Environment ◽

Ion Etching ◽

Deep Reactive Ion Etching ◽

Dimensional Simulation

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Formation of Through-Silicon-Vias by Laser Drilling and Deep Reactive Ion Etching

Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology ◽

10.1115/imece2004-62322 ◽

2004 ◽

Author(s):

Ronald Hon ◽

Shawn X. D. Zhang ◽

S. W. Ricky Lee

Keyword(s):

Reactive Ion Etching ◽

Three Dimensional ◽

Laser Drilling ◽

Wet Etching ◽

Ion Etching ◽

Through Silicon Vias ◽

Deep Reactive Ion Etching ◽

Definition Of ◽

Silicon Vias ◽

Wafer Thinning

The focus of this study is on the fabrication of through silicon vias (TSV) for three dimensional packaging. According to IPC-6016, the definition of microvias is a hole with a diameter of less than or equal to 150 μm. In order to meet this requirement, laser drilling and deep reactive ion etching (but not wet etching) are used to make the microvias. Comparisons between these two different methods are carried out in terms of wall straightness, smoothness, smallest via produced and time needed for fabrication. In addition, discussion on wafer thinning for making through silicon microvias is given as well.

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Three-dimensional photonic crystals developed by double-angled reactive-ion etching technique

2009 IEEE LEOS Annual Meeting Conference Proceedings ◽

10.1109/leos.2009.5343486 ◽

2009 ◽

Author(s):

Katsuyoshi Suzuki ◽

Shigeki Takahashi ◽

Makoto Okano ◽

Masahiro Imada ◽

Kenji Ishizaki ◽

...

Keyword(s):

Photonic Crystals ◽

Reactive Ion Etching ◽

Three Dimensional ◽

Etching Technique ◽

Ion Etching

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Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

MRS Proceedings ◽

10.1557/proc-1258-q07-07 ◽

2010 ◽

Vol 1258 ◽

Author(s):

Mahdieh Mehran ◽

Zeinab Sanaee ◽

Shamsoddin Mohajerzadeh

Keyword(s):

Silicon Surface ◽

Oil Spills ◽

Reactive Ion Etching ◽

Rf Plasma ◽

Silicon Substrates ◽

Gas Flows ◽

Plasma Power ◽

Etching Technique ◽

Ion Etching ◽

Etching Parameters

AbstractWe propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

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