Fabrication of complex curved three-dimensional silicon microstructures using ion irradiation

2011 ◽  
Vol 22 (1) ◽  
pp. 015015 ◽  
Author(s):  
S Azimi ◽  
M B H Breese ◽  
Z Y Dang ◽  
Y Yan ◽  
Y S Ow ◽  
...  
2003 ◽  
Vol 797 ◽  
Author(s):  
Koichi Awazu ◽  
Makoto Fujimaki ◽  
Yoshimichi Ohki ◽  
Tetsuro Komatsubara

ABSTRACTWe have developed a nano-micro structure fabrication method in rutile TiO2 single crystal by use of swift heavy-ion irradiation. The area where ions heavier than Cl ion accelerated with MeV-order high energy were irradiated was well etched by hydrofluoric acid, by comparison etching was not observed in the pristine TiO2 single crystal. Noticed that the irradiated area could be etched to a depth at which the electronic stopping power of the ion decayed to a value of 6.2keV/nm. We also found that the value of the electronic stopping power was increased, eventually decreased against depth in TiO2 single crystal with, e.g. 84.5MeV Ca ion. Using such a beam, inside of TiO2 single crystal was selectively etched with 20% hydrofluoric acid, while the top surface of TiO2 single crystal subjected to irradiation was not etched. Roughness of the new surface created in the single crystal was within 7nm with the atomic forth microscopy measurement.


1995 ◽  
Vol 7 (3) ◽  
pp. 200-203 ◽  
Author(s):  
Masayoshi Esashi ◽  

Packaged micromechanical sensors were fabricated using bonded glass-silicon microstructures. These are integrated, resonant, or force-balancing sensors. Distributed electrostatic microactuator (DEMA) and three-dimensional microfabrication methods were developed.


2014 ◽  
Vol 114 ◽  
pp. 78-84 ◽  
Author(s):  
Yasser M. Sabry ◽  
Diaa Khalil ◽  
Bassam Saadany ◽  
Tarik Bourouina

1993 ◽  
Vol 311 ◽  
Author(s):  
L.L. Clevengert ◽  
Q.Q. Hong ◽  
R. Mann ◽  
J.M.E. Harpert ◽  
K. Barmake ◽  
...  

ABSTRACTTitanium silicide and cobalt silicide crystallization and formation reactions are important for the processing of CMOS circuits. We demonstrate that kinetic analysis of these reactions under both high heating rates and isothermal heating conditions allows for the determination of transformation mechanisms. For Ti/Si reactions, we show that the C49 to C54-TiSi2 transformation can not be bypassed using heating rates up to 3000°C/min. For the crystallization of CoSi2 from amorphous Co-Si thin films without ion irradiation, the crystallization kinetics are characterized by three dimensional growth from quickly consumed nucleation sites. With high dose silicon ion implantation of the as-deposited films, the crystallization mechanism changes to homogeneous nucleation and two dimensional growth.


1998 ◽  
Vol 528 ◽  
Author(s):  
M.V. Ramana Murty ◽  
T. Curcic ◽  
A. Judy ◽  
B.H. Cooper ◽  
A.R. Woll ◽  
...  

AbstractX-ray scattering is used to investigate the surface dynamics on Au(111) during Ar+ ion irradiation. During 500 eV Ar+ ion irradiation, we observe the three regimes of step retraction, quasi-layer-by-layer removal and three dimensional rough erosion, analagous to molecular beam epitaxy. The quasi-layer-by-layer sputtering regime has been studied to identify similarities and differences in surface evolution during ion irradiation and molecular beam epitaxy. X-ray measurements suggest that 500 eV Ar+ ion irradiation does not lead to stable adatom island formation. Also, in contrast to molecular beam epitaxy, adatom detachment and diffusion seems important in describing the surface kinetics during ion irradiation.


2017 ◽  
Vol 12 ◽  
pp. 51-60 ◽  
Author(s):  
Hiroko Ikeda ◽  
Hikaru Souda ◽  
Anggraeini Puspitasari ◽  
Kathryn D. Held ◽  
Jun Hidema ◽  
...  

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