Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD

2007 ◽  
Vol 9 (2) ◽  
pp. 177-180 ◽  
Author(s):  
Guo Yu ◽  
Zhang Xiwen ◽  
Han Gaorong
Keyword(s):  
Amorphous Silicon ◽  
Dielectric Barrier Discharge ◽  
Room Temperature ◽  
Barrier Discharge ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Dielectric Barrier ◽  
Temperature Growth ◽  
Hydrogenated Amorphous

Lower-Temperature Growth of Hydrogenated Amorphous Silicon Films from Inductively Coupled Silane Plasma

1996 ◽  
Vol 35 (Part 2, No. 8A) ◽  
pp. L1009-L1011 ◽  
Author(s):  
Masashi Goto ◽  
Hirotaka Toyoda ◽  
Masatoshi Kitagawa ◽  
Takashi Hirao ◽  
Hideo Sugai
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Temperature Growth ◽  
Inductively Coupled ◽  
Lower Temperature ◽  
Hydrogenated Amorphous ◽  
Silane Plasma

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

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