Light trapping in a-Si/c-Si heterojunction solar cells by embedded ITO nanoparticles at rear surface

2017 ◽  
Vol 50 (49) ◽  
pp. 495110 ◽  
Author(s):  
Sukanta Dhar ◽  
Sourav Mandal ◽  
Suchismita Mitra ◽  
Hemanta Ghosh ◽  
Sampad Mukherjee ◽  
...  
2020 ◽  
Vol 467 ◽  
pp. 125657
Author(s):  
Hyeongsik Park ◽  
Myung hun Shin ◽  
S.M. Iftiquar ◽  
Shahzada Qamar Hussain ◽  
Minkyu Ju ◽  
...  

Solar RRL ◽  
2019 ◽  
Vol 3 (3) ◽  
pp. 1800261 ◽  
Author(s):  
Jian Yu ◽  
Liping Zhang ◽  
Tao Chen ◽  
Jiantao Bian ◽  
Jianhua Shi ◽  
...  

2014 ◽  
Vol 4 (5) ◽  
pp. 1212-1219 ◽  
Author(s):  
Yang Li ◽  
Scott Dunham ◽  
Supriya Pillai ◽  
Zi Ouyang ◽  
Allen Barnett ◽  
...  

2015 ◽  
Vol 137 (5) ◽  
Author(s):  
Nordine Sahouane ◽  
Abdellatif Zerga ◽  
Zeggai Oussama

We use Silvaco software (atlas tcad) simulation to investigate the effect of dielectric layer deposed on rear surface of solar cells passivated emitter and rear totally diffused (PERT). For an improved performance for this solar cell, several physical factors must be considered, such as the light trapping behavior, and the resulting passivation performance and rear surface recombination currents were investigated. Particular consideration will be given to the back surface reflector (BSR) impact on reflection surface, interface passivation, and on the I–V characteristics. Numerical simulations show that using a layer of two dielectrics (SiNx/SiO2) with optical indices and thickness optimized in combination with contacts located (optimized metallization fraction f) at the rear surface allow for energy conversion efficiencies of 21.26% compared to a single layer of dielectric SiN 21.01%.


2021 ◽  
Vol 29 (5) ◽  
pp. 7410
Author(s):  
Samia Ahmed Nadi ◽  
Karsten Bittkau ◽  
Florian Lentz ◽  
Kaining Ding ◽  
Uwe Rau

2015 ◽  
Vol 821-823 ◽  
pp. 189-192 ◽  
Author(s):  
Stefania Privitera ◽  
Vincenza Brancato ◽  
Donatella Spadaro ◽  
Ruggero Anzalone ◽  
Alessandra Alberti ◽  
...  

The electrical and optical properties of n-doped polycrystalline 3C-SiC films grown on 6 inches Si wafers have been investigated as a function of precursor gases, deposition temperature and C/Si ratio. The Si/SiC interface has been optimized, eliminating the voids formation through a double temperature step process and by introducing a thin not intentionally doped layer. Films with high surface roughness, favourable for light trapping in photovoltaic applications, and with resistivity around 20 mOhm cm have been obtained for C/Si ratio close to 1. Simple solar cells have been also manufactured and proved the functionality of poly 3C-SiC/Si heterojunction solar cell. Increased quantum efficiency in the range 300-500 nm has been observed, compared to amorphous Si, making poly 3C-SiC heterojunction solar cells interesting for high temperature applications or water splitting.


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