scholarly journals Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection

2019 ◽  
Vol 52 (50) ◽  
pp. 505102
Author(s):  
M I Idris ◽  
M H Weng ◽  
A Peters ◽  
R J Siddall ◽  
N J Townsend ◽  
...  
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Mos Capacitors ◽  
Voltage Shift ◽  
Field Electron ◽  
Flatband Voltage ◽  
Phosphorus Doped

Influence of high-field electron injection regimes on modification of dielectric films of MOS devices

2010 ◽  
Vol 1 (2) ◽  
pp. 105-109
Author(s):  
V. V. Andreev ◽  
G. G. Bondarenko ◽  
A. A. Stolyarov ◽  
D. S. Vasyutin ◽  
A. M. Mikhal’kov
Keyword(s):  
High Field ◽  
Electron Injection ◽  
Dielectric Films ◽  
Mos Devices ◽  
Field Electron

scholarly journals Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment

2015 ◽  
Vol 128 (5) ◽  
pp. 887-890 ◽  
Author(s):  
V.V. Andreev ◽  
G.G. Bondarenko ◽  
V.M. Maslovsky ◽  
A.A. Stolyarov
Keyword(s):  
High Field ◽  
Plasma Jet ◽  
Electron Injection ◽  
Arc Plasma ◽  
Mos Devices ◽  
Field Electron

Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

2003 ◽  
Vol 94 (7) ◽  
pp. 4440-4448 ◽  
Author(s):  
A. N. Nazarov ◽  
T. Gebel ◽  
L. Rebohle ◽  
W. Skorupa ◽  
I. N. Osiyuk ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
High Field ◽  
Electron Injection ◽  
Field Electron ◽  
Ion Implanted

Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

2002 ◽  
Vol 42 (9-11) ◽  
pp. 1461-1464 ◽  
Author(s):  
A.N. Nazarov ◽  
I.N. Osiyuk ◽  
V.S. Lysenko ◽  
T. Gebel ◽  
L. Rebohle ◽  
...  
Keyword(s):  
High Field ◽  
Charge Trapping ◽  
Electron Injection ◽  
Field Electron ◽  
Ion Implanted
Sign in / Sign up

Export Citation Format

Share Document