Two-dimensional MoS2/GaN van der Waals heterostructures: tunable direct band alignments and excitonic optical properties for photovoltaic applications

2019 ◽  
Vol 53 (9) ◽  
pp. 095107
Author(s):  
Rui Gao ◽  
Hairui Liu ◽  
Hui Liu ◽  
Jien Yang ◽  
Feng Yang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Photovoltaic Applications ◽  
Direct Band ◽  
Band Alignments

scholarly journals Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3338
Author(s):  
Jiali Wang ◽  
Xiuwen Zhao ◽  
Guichao Hu ◽  
Junfeng Ren ◽  
Xiaobo Yuan
Keyword(s):  
Optical Properties ◽  
Absorption Coefficient ◽  
High Performance ◽  
Density Functional ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Electronic And Optical Properties ◽  
Wide Range ◽  
Direct Band

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.

Intriguing electronic structures and optical properties of two-dimensional van der Waals heterostructures of Zr2CT2 (T = O, F) with MoSe2 and WSe2

2018 ◽  
Vol 6 (11) ◽  
pp. 2830-2839 ◽  
Author(s):  
Gul Rehman ◽  
S. A. Khan ◽  
B. Amin ◽  
Iftikhar Ahmad ◽  
Li-Yong Gan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Material Properties ◽  
First Principles ◽  
Electronic Structures ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructures ◽  
Metal Dichalcogenides

Based on (hybrid) first-principles calculations, material properties (structural, electronic, vibrational, optical, and photocatalytic) of van der Waals heterostructures and their corresponding monolayers (transition metal dichalcogenides and MXenes) are investigated.

Tunable electronic and optical properties of InSe/InTe van der Waals heterostructures toward optoelectronic applications

2018 ◽  
Vol 6 (27) ◽  
pp. 7201-7206 ◽  
Author(s):  
Jimin Shang ◽  
Longfei Pan ◽  
Xiaoting Wang ◽  
Jingbo Li ◽  
Hui-Xiong Deng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Structure ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Normal Strain ◽  
Type Ii ◽  
Van Der Waals Heterostructures ◽  
Typical Type ◽  
Direct Band

2D InSe/InTe van der Waals heterostructures with a direct band structure and typical type-II band alignment, effectively tuned by applying normal strain, are systematically discussed for future optoelectronic devices.

Two-dimensional transition-metal dichalcogenides-based ferromagnetic van der Waals heterostructures

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17585-17592 ◽  
Author(s):  
Juan Du ◽  
Congxin Xia ◽  
Wenqi Xiong ◽  
Tianxing Wang ◽  
Yu Jia ◽  
...  
Keyword(s):  
Transition Metal ◽  
Electric Field ◽  
Ground State ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Metal Dichalcogenides ◽  
Band Alignments ◽  
Curie Temperatures

TMDs-based vdW semiconducting heterostructures have stable ferromagnetic (FM) ground state, high Curie temperatures and electric field-tunable multi-band alignments.

Tunable electronic properties and band alignments of InS-arsenene heterostructure via external strain and electric field

2021 ◽  
Author(s):  
Hui Yao ◽  
Chao Zhang ◽  
Qiang Wang ◽  
Jianwei Li ◽  
Yunjin Yu ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures ◽  
Band Alignments ◽  
Novel Devices ◽  
External Strain

The Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials have been extensively recognized promising candidates for fabricating multi-functional novel devices. In this work, we investigated structural and electronic...

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