Two-dimensional Heterostructures and their Device Applications: Progress, Challenges and Opportunities - Review

Author(s):  
Songqing Zhang ◽  
Junliang Liu ◽  
Maxwell Merle Kirchner ◽  
Han Wang ◽  
Yongling Ren ◽  
...  
2021 ◽  
pp. 535-556
Author(s):  
Harini Gunda ◽  
Leonard E. Klebanoff ◽  
Peter Anand Sharma ◽  
Akash K. Varma ◽  
Varun Dolia ◽  
...  

2017 ◽  
Vol 1 (9) ◽  
pp. 1875-1898 ◽  
Author(s):  
Yong Chen ◽  
Gan Jia ◽  
Yingfei Hu ◽  
Guozheng Fan ◽  
Yuen Hong Tsang ◽  
...  

In this study, we summarize a series of typical 2D nanomaterials for photocatalytic CO2conversion. Furthermore, based on the characteristics of 2D materials and the current status of research on photocatalytic CO2reduction, the challenges and opportunities of 2D materials as prospective photocatalysts for CO2reduction will also be discussed.


Author(s):  
Shohei Kumagai ◽  
Tatsuyuki Makita ◽  
Shun Watanabe ◽  
Jun Takeya

Abstract The past several decades have witnessed a vast array of developments in printable organic semiconductors, where successes both in synthetic chemistry and in printing technology constituted a key step forward to realization of printed electronics. In this review, we highlight specifically on materials science, charge transport, and device engineering of —two-dimensional single crystals—. Defect-free organic single-crystalline wafers manufactured via a one-shot printing process allows remarkably reliable implementations of organic thin-film transistors with decently high carrier mobility up to 10 cm2 V-1 s-1, which has revolutionized the current printing electronics to be able to meet looming IoT challenges. This review focuses on the perspective of printing two-dimensional single crystals with reasonable areal coverage, showing their promising applications for practical devices and future human society, particularly based on our recent contributions.


2020 ◽  
Vol 59 (24) ◽  
pp. 9403-9407 ◽  
Author(s):  
Chenguang Li ◽  
Yongshuai Wang ◽  
Ye Zou ◽  
Xiaotao Zhang ◽  
Huanli Dong ◽  
...  

2020 ◽  
Vol 132 (24) ◽  
pp. 9489-9493 ◽  
Author(s):  
Chenguang Li ◽  
Yongshuai Wang ◽  
Ye Zou ◽  
Xiaotao Zhang ◽  
Huanli Dong ◽  
...  

1998 ◽  
Vol 09 (01) ◽  
pp. 65-99 ◽  
Author(s):  
MICHAEL S. SHUR ◽  
MICHEL DYAKONOV

In deep submicron silicon MOSFETs, GaAs-based HEMTs, and in new emerging heterostructure systems, such as AlGaN/GaN, electrons forming a two-dimensional (2D) conducting channel exhibit new interesting effects that might find important device applications. Some of these effects are related to the space dependence of the electron mass. Other effects are linked to a large sheet electron concentration, when electrons behave not as a 2D gas but rather as a 2D electron electron fluid. We consider plasma effects in this fluid and discuss plasma wave electronic devices that rely on these effects. We also discuss the properties of 2D electrons in silicon devices, where plasma effects might also play an important role in deep submicron MOSFETs.


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