scholarly journals The impact of anion elements on the engineering of the electronic and optical characteristics of the two dimensional monolayer janus MoSSe for nanoelectronic device applications

2020 ◽  
Vol 18 ◽  
pp. 103284
Author(s):  
F. Barakat ◽  
A. Laref ◽  
Mohamad S AlSalhi ◽  
S. Faraji
Keyword(s):  
Optical Characteristics ◽  
Two Dimensional ◽  
Nanoelectronic Device ◽  
Device Applications ◽  
The Impact

Recent Advances and Need of Green Synthesis in Two-Dimensional Materials for Energy Conversion and Storage Applications

2021 ◽  
Vol 16 ◽  
Author(s):  
Joice Sophia Ponraj ◽  
Muniraj Vignesh Narayanan ◽  
Ranjith Kumar Dharman ◽  
Valanarasu Santiyagu ◽  
Ramalingam Gopal ◽  
...  
Keyword(s):  
Energy Storage ◽  
Green Synthesis ◽  
2D Materials ◽  
Synthesis Method ◽  
Energy Storage And Conversion ◽  
Two Dimensional ◽  
Severe Problem ◽  
Energy Conversion And Storage ◽  
Energy Application ◽  
The Impact

: Increasing energy crisis across the globe requires immediate solutions. Two-dimensional (2D) materials are in great significance because of its application in energy storage and conversion devices but the production process significantly impacts the environment thereby posing a severe problem in the field of pollution control. Green synthesis method provides an eminent way of reduction in pollutants. This article reviews the importance of green synthesis in the energy application sector. The focus of 2D materials like graphene, MoS2, VS2 in energy storage and conversion devices are emphasized based on supporting recent reports. The emerging Li-ion batteries are widely reviewed along with their promising alternatives like Zn, Na, Mg batteries and are featured in detail. The impact of green methods in the energy application field are outlined. Moreover, future outlook in the energy sector is envisioned by proposing an increase in 2D elemental materials research.

Study on Grinding Force in Two-Dimensional Ultrasonic Grinding Nano-Ceramics

2010 ◽  
Vol 42 ◽  
pp. 204-208 ◽  
Author(s):  
Xiang Dong Li ◽  
Quan Cai Wang
Keyword(s):  
Mathematical Model ◽  
Ultrasonic Vibration ◽  
Contact Time ◽  
Reaction Force ◽  
Grinding Force ◽  
Two Dimensional ◽  
Indentation Fracture ◽  
Ultrasonic Grinding ◽  
The Impact ◽  
Ultrasonic Vibration Assisted Grinding

In this paper, the characteristic of grinding force in two-dimensional ultrasonic vibration assisted grinding nano-ceramic was studied by experiment based on indentation fracture mechanics, and mathematical model of grinding force was established. The study shows that grinding force mainly result from the impact of the grains on the workpiece in ultrasonic grinding, and the pulse power is much larger than normal grinding force. The ultrasonic vibration frequency is so high and the contact time of grains with the workpiece is so short that the pulse force will be balanced by reaction force from workpiece. In grinding workpiece was loaded by the periodical stress field, which accelerates the fatigue fracture.

scholarly journals Depth Profiling of La[sub 2]O[sub 3]∕HfO[sub 2] Stacked Dielectrics for Nanoelectronic Device Applications

2011 ◽  
Vol 14 (3) ◽  
pp. H139 ◽  
Author(s):  
H. N. Alshareef ◽  
S. Mure ◽  
P. Majhi ◽  
M. A. Quevedo-Lopez
Keyword(s):  
Depth Profiling ◽  
Nanoelectronic Device ◽  
Device Applications

Analysis of the Impact of Specific Heat Ratio on Two-Dimensional Low Maher Number Nozzle Design

2014 ◽  
Vol 590 ◽  
pp. 546-550
Author(s):  
Zhi Qiang Fan ◽  
Hai Bo Yang ◽  
Fei Zhao ◽  
Rong Zhu ◽  
Dong Bai Sun
Keyword(s):  
Specific Heat ◽  
Supersonic Nozzle ◽  
Two Dimensional ◽  
Nozzle Design ◽  
Scheme Design ◽  
Specific Heat Ratio ◽  
Nozzle Contour ◽  
Ratio Change ◽  
Change Impact ◽  
The Impact

The practical requirements of the project the nozzle entrance temperature is high, the gas specific heat ratio varies greatly, so it must consider the specific heat ratio change impact on two-dimensional nozzle contour design. Divided into consideration specific heat ratio change and not consider two kinds of scheme design of 1.4Ma nozzle profile and build the model using the arc line method, numerical simulation is carried out through the CFD software Fluent, analysis of two kinds of design scheme comparison. The results show that, in the supersonic nozzle at low Maher numbers, two schemes of nozzle design profile similarity, parameters change little flow tube, export the Maher number and the flow quality can meet the design requirements, proof of specific heat ratio has little effect on the design results in the design of the nozzle under the condition of low Maher number.

scholarly journals Nanoelectronic device applications of a chemically stable GaAs structure

1999 ◽  
Vol 17 (4) ◽  
pp. 1773 ◽  
Author(s):  
D. B. Janes ◽  
V. R. Kolagunta ◽  
M. Batistuta ◽  
B. L. Walsh ◽  
R. P. Andres ◽  
...  
Keyword(s):  
Nanoelectronic Device ◽  
Gaas Structure ◽  
Device Applications

Phonon Coupling and Dielectric Response in 2D Semiconductor

NANO ◽  
2021 ◽  
Author(s):  
Arslan Usman ◽  
Abdul Sattar ◽  
Hamid Latif ◽  
Muhammad Imran
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Coupling Mechanism ◽  
Two Dimensional ◽  
Electron Hole ◽  
Exciton Coupling ◽  
Gain Energy ◽  
Metal Dichalcogenides ◽  
Layered Transition Metal ◽  
The Impact

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.

Sign in / Sign up

Export Citation Format

Share Document