Evidence of a 2D Fermi surface due to surface states in a p-type metallic Bi2Te3

2018 ◽  
Vol 30 (18) ◽  
pp. 185601
Author(s):  
K Shrestha ◽  
V Marinova ◽  
B Lorenz ◽  
C W Chu
Keyword(s):  
Author(s):  
Shahram Yalameha ◽  
Zahra Nourbakhsh ◽  
Daryoosh Vashaee

Abstract We report the topological phase, thermal, and electrical properties of bialkali bismuthide compounds (Na,K)2RbBi, as yet hypothetical. The topological phase transitions of these compounds under hydrostatic pressure are investigated. The calculated topological surface states and Z2 topological index confirm the nontrivial topological phase. The electronic properties and transport coefficients are obtained using the density functional theory combined with the Boltzmann transport equation. The relaxation times are determined using the deformation potential theory to calculate the electronic thermal and electrical conductivity. The calculated mode Grüneisen parameters are substantial, indicating strong anharmonic acoustic phonons scattering, which results in an exceptionally low lattice thermal conductivity. These compounds also have a favorable thermoelectric power factor leading to a relatively flat p-type figure-of-merit over a broad temperature range. Furthermore, the mechanical properties and phonon band dispersions show that these structures are mechanically and dynamically stable. Therefore, they offer excellent candidates for practical applications over a wide range of temperatures.


2020 ◽  
Vol 2 (4) ◽  
pp. 906-912
Author(s):  
Diyuan Zheng ◽  
Xinyuan Dong ◽  
Jing Lu ◽  
Anhua Dong ◽  
Yiru Niu ◽  
...  

2008 ◽  
Vol 34 (3) ◽  
pp. 241-243 ◽  
Author(s):  
N. N. Zaveryukhina ◽  
E. B. Zaveryukhina ◽  
S. I. Vlasov ◽  
B. N. Zaveryukhin

2017 ◽  
Vol 110 (12) ◽  
pp. 121103 ◽  
Author(s):  
Xu Huang ◽  
Chunlian Mei ◽  
Zhikai Gan ◽  
Peiqi Zhou ◽  
Hui Wang

1982 ◽  
Vol 18 ◽  
Author(s):  
Winfred MÖnch

Metal-semiconductor contacts and semiconductor heterojunctions are wellestablished concepts in semiconductor device technology. The key parameters characterizing such junctions are the barrier height and valence band discontinuity at the interface and the electronic interface states. Clean cleaved GaAs(110) surfaces exhibit no intrinsic surface states in the bulk band gap but do exhibit extrinsic cleavage-induced states. Furthermore, local segregates of arsenic were detected. The chemisorption of metals, semiconductors, hydrogen and oxygen causes depletion layers to form on both n-and p-type crystals. The surface states responsible for these band bendings, which persist even under thick layers of metals and semiconductors, are thought to be related to chemisorption-induced defects. Possible candidates are discussed. Chemical trends are also considered.


1996 ◽  
Vol 437 ◽  
Author(s):  
Eli Rotenberg ◽  
J. D. Denlinger ◽  
S. D. Kevan ◽  
K. W. Goodman ◽  
J. G. Tobin ◽  
...  

AbstractThe electronic states at the Fermi surface determine diverse properties such as magnetism, chemical bonding, and phonon-electron coupling. Using a conventional hemispherical analyzer at the ultraESCA beamline 7.0 of the Advanced Light Source, we have measured Fermi contours of the bulk and surface states of Cu(001) and Ag(001). For bulk states, we used uniform sampling in k-space by varying both the electron takeoff angle as well as the photon energy. Three-dimensional plots (in k-space) of bulk and surface states at the Fermi level can easily be achieved within one or two synchrotron shifts. Surface states, whose momentum is independent of k-perpendicular, are easily mapped if sufficiently dense angular sampling is performed. The states crossing the Fermi level at X in the surface Brillouin Zone of Cu(100) and Ag(100) are presented as examples.


1994 ◽  
Vol 358 ◽  
Author(s):  
M. Ben-Chorin ◽  
S. Grebner ◽  
F. Wang ◽  
R. Schwarz ◽  
A. Nikolov ◽  
...  

ABSTRACTIn order to clarify the role of the enlarged surface area of porous silicon on the electrical conductivity, we have studied the transport in mesoporous silicon layers, for which quantum confinement effects are negligible. We prepare free standing mesoporous films, from highly doped p-type Si wafers. The dark conductivity of the mesoporous layers is activated with an energy of 0.5 eV. Thermopower measurements show negative sign indicating electron conduction. The exposure of these layers to methanol vapor results in an increased conductivity and change of the thermopower magnitude. Photoconductivity measurements and the Steady-State Photocarrier Grating technique (SSPG) are used to evaluate the density of the surface states and the dynamics of the photo-excited carriers. All these results indicate that a large density of surface states exist, which results in a depletion of the free holes.


2017 ◽  
pp. 1-1 ◽  
Author(s):  
Bowei Zhou ◽  
Zhikai Gan ◽  
Anhua Dong ◽  
Sipei Wang ◽  
Hui Wang
Keyword(s):  

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